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Syst."],"published-print":{"date-parts":[[2017,4,30]]},"abstract":"<jats:p>Extending double-gate FinFET scaling to sub-10nm technology regime requires device-engineering techniques for countering the rise of direct source to drain tunneling (DSDT), edge direct tunneling (EDT) and short channel effects (SCE) that degrade FinFET I-V characteristics. Symmetric underlap is effective for eliminating EDT, diminishing DSDT, and lowering the fringe component of gate capacitance. However, excessive symmetric underlap also lowers the on-current, which is mainly due to thermionic emission. In this work, it is demonstrated that at sub-10nm node, asymmetric underlapped FinFETs with slightly longer underlap toward drain side than source side are superior to symmetric underlapped FinFETs due to further improvement in I<jats:sub>on<\/jats:sub>\/I<jats:sub>off<\/jats:sub>and reduction in gate-to-drain capacitance. Using quantum mechanical device simulations, FinFETs with various degrees of underlap have been analyzed for improvement in I-V characteristics. A FinFET model for circuit simulations has been constructed that captures the major sub-10nm leakage components, namely, thermionic emission, DSDT, EDT, direct gate oxide tunneling and its associated components. By simulating a 10-stage NAND circuit and a LEON3 processor with interconnect parasitics using these devices, it is shown that asymmetric underlap instead of symmetric underlap in sub-10nm FinFETs can offer lower energy consumption with improved performance for near-threshold logic and higher energy-efficiency for super-threshold logic operation.<\/jats:p>","DOI":"10.1145\/2967615","type":"journal-article","created":{"date-parts":[[2016,11,4]],"date-time":"2016-11-04T12:49:04Z","timestamp":1478263744000},"page":"1-22","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Asymmetric Underlapped FinFETs for Near- and Super-Threshold Logic at Sub-10nm Technology Nodes"],"prefix":"10.1145","volume":"13","author":[{"given":"A. 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