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Storage"],"published-print":{"date-parts":[[2018,2,28]]},"abstract":"<jats:p>Although the multilevel cell (MLC) technique is widely adopted by flash-memory vendors to boost the chip density and lower the cost, it results in serious performance and reliability problems. Different from past work, a new cell programming method is proposed to not only significantly improve chip performance but also reduce the potential bit error rate. In particular, a single-level cell (SLC)-like programming scheme is proposed to better explore the threshold-voltage relationship to denote different MLC bit information, which in turn drastically provides a larger window of threshold voltage similar to that found in SLC chips. It could result in less programming iterations and simultaneously a much less reliability problem in programming flash-memory cells. 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