{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T16:33:18Z","timestamp":1782923598259,"version":"3.54.5"},"reference-count":35,"publisher":"Association for Computing Machinery (ACM)","issue":"2","license":[{"start":{"date-parts":[[2018,4,12]],"date-time":"2018-04-12T00:00:00Z","timestamp":1523491200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"funder":[{"DOI":"10.13039\/501100017607","name":"Shenzhen Basic Research Project","doi-asserted-by":"crossref","award":["ICYJ20170307160135308"],"award-info":[{"award-number":["ICYJ20170307160135308"]}],"id":[{"id":"10.13039\/501100017607","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61300047,61472152,61572209"],"award-info":[{"award-number":["61300047,61472152,61572209"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013314","name":"111 Project","doi-asserted-by":"crossref","award":["B07038"],"award-info":[{"award-number":["B07038"]}],"id":[{"id":"10.13039\/501100013314","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100018583","name":"Wuhan Science and Technology Project","doi-asserted-by":"crossref","award":["2017010201010108"],"award-info":[{"award-number":["2017010201010108"]}],"id":[{"id":"10.13039\/501100018583","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"crossref","award":["2016YXMS019"],"award-info":[{"award-number":["2016YXMS019"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":["ACM Trans. Storage"],"published-print":{"date-parts":[[2018,5,31]]},"abstract":"<jats:p>As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory. These characteristics, especially those different from planar NAND flash, can significantly affect design choices of flash management techniques. In this article, we present a characterization study on the state-of-the-art 3D floating gate (FG) NAND flash memory through comprehensive experiments on an FPGA-based 3D NAND flash evaluation platform. We make distinct observations on its performance and reliability, such as operation latencies and various error patterns, followed by careful analyses from physical and circuit-level perspectives. Although 3D FG NAND flash provides much higher storage densities than planar NAND flash, it faces new performance challenges of garbage collection overhead and program performance variations and more complicated reliability issues due to, e.g., distinct location dependence and value dependence of errors. We also summarize the differences between 3D FG NAND flash and planar NAND flash and discuss implications on the designs of NAND flash management techniques brought by the architecture innovation. We believe that our work will facilitate developing novel 3D FG NAND flash-oriented designs to achieve better performance and reliability.<\/jats:p>","DOI":"10.1145\/3162616","type":"journal-article","created":{"date-parts":[[2018,4,13]],"date-time":"2018-04-13T12:10:20Z","timestamp":1523621420000},"page":"1-31","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":51,"title":["Characterizing 3D Floating Gate NAND Flash"],"prefix":"10.1145","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5210-6849","authenticated-orcid":false,"given":"Qin","family":"Xiong","sequence":"first","affiliation":[{"name":"Huazhong University of Science and Technology, Wuhan, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fei","family":"Wu","sequence":"additional","affiliation":[{"name":"Huazhong University of Science and Technology, Wuhan, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhonghai","family":"Lu","sequence":"additional","affiliation":[{"name":"KTH Royal Institute of Technology, Kista, Sweden"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Zhu","sequence":"additional","affiliation":[{"name":"Huazhong University of Science and Technology, Wuhan, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"You","family":"Zhou","sequence":"additional","affiliation":[{"name":"Huazhong University of Science and Technology, Wuhan, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yibing","family":"Chu","sequence":"additional","affiliation":[{"name":"Renice Technology Co. Limited, Shenzhen, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changsheng","family":"Xie","sequence":"additional","affiliation":[{"name":"Huazhong University of Science and Technology, Wuhan, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ping","family":"Huang","sequence":"additional","affiliation":[{"name":"Temple University, Philadelphia, PA, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"320","published-online":{"date-parts":[[2018,4,12]]},"reference":[{"key":"e_1_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2247606"},{"key":"e_1_2_1_2_1","volume-title":"Proceedings of the IEEE International Reliability Physics Symposium (IRPS\u201984)","author":"Baglee David A.","year":"1984","unstructured":"David A. Baglee . 1984 . Characteristics 8 reliability of 100A oxides . In Proceedings of the IEEE International Reliability Physics Symposium (IRPS\u201984) . 152--155. David A. Baglee. 1984. Characteristics 8 reliability of 100A oxides. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS\u201984). 152--155."},{"key":"e_1_2_1_3_1","volume-title":"Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201910)","author":"Boboila Simona","year":"2010","unstructured":"Simona Boboila and Peter Desnoyers . 2010 . Write endurance in flash drives: Measurements and analysis . In Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201910) . 115--128. Simona Boboila and Peter Desnoyers. 2010. Write endurance in flash drives: Measurements and analysis. In Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201910). 115--128."},{"key":"e_1_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.5555\/2485288.2485597"},{"key":"e_1_2_1_5_1","volume-title":"Proceedings of the Conference on Design, Automation and Test in Europe (DATE\u201912)","author":"Cai Yu","year":"2012","unstructured":"Yu Cai , Erich F. Haratsch , Onur Mutlu , and Ken Mai . 2012 . Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis . In Proceedings of the Conference on Design, Automation and Test in Europe (DATE\u201912) . 521--526. Yu Cai, Erich F. Haratsch, Onur Mutlu, and Ken Mai. 2012. Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis. In Proceedings of the Conference on Design, Automation and Test in Europe (DATE\u201912). 521--526."},{"key":"e_1_2_1_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2015.49"},{"key":"e_1_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056062"},{"key":"e_1_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2013.6657034"},{"key":"e_1_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2012.6378623"},{"key":"e_1_2_1_10_1","volume-title":"Proceedings of the Flash Memory Summit. 1--21","author":"Cooke Jim","year":"2017","unstructured":"Jim Cooke . 2017 . Overcoming challenges in 3D NAND volume manufacturing . In Proceedings of the Flash Memory Summit. 1--21 . Jim Cooke. 2017. Overcoming challenges in 3D NAND volume manufacturing. In Proceedings of the Flash Memory Summit. 1--21."},{"key":"e_1_2_1_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.833583"},{"key":"e_1_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.1145\/1740390.1740402"},{"key":"e_1_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1928.0091"},{"key":"e_1_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2024031"},{"key":"e_1_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669118"},{"key":"e_1_2_1_16_1","volume-title":"Proceedings of the USENIX Annual Technical Conference. 79--90","author":"Grupp Laura M.","year":"2013","unstructured":"Laura M. Grupp , John D. Davis , and Steven Swanson . 2013 . The Harey tortoise: Managing heterogeneous write performance in SSDs . In Proceedings of the USENIX Annual Technical Conference. 79--90 . Laura M. Grupp, John D. Davis, and Steven Swanson. 2013. The Harey tortoise: Managing heterogeneous write performance in SSDs. In Proceedings of the USENIX Annual Technical Conference. 79--90."},{"key":"e_1_2_1_17_1","unstructured":"International Data Corporation. Where in the world is storage. Retrieved from https:\/\/www.idc.com\/IDC_Storage-infographic.jsp.  International Data Corporation. Where in the world is storage. Retrieved from https:\/\/www.idc.com\/IDC_Storage-infographic.jsp."},{"key":"e_1_2_1_18_1","volume-title":"Proceedings of the Annual International Symposium on Computer Architecuture (ISCA\u201914)","author":"Jung Myoungsoo","unstructured":"Myoungsoo Jung , Wonil Choi , Shekhar Srikantaiah , Joonhyuk Yoo , and Mahmut T. Kandemir . 2014. HIOS: A host interface I\/O scheduler for solid state disks . In Proceedings of the Annual International Symposium on Computer Architecuture (ISCA\u201914) . 289--300. Myoungsoo Jung, Wonil Choi, Shekhar Srikantaiah, Joonhyuk Yoo, and Mahmut T. Kandemir. 2014. HIOS: A host interface I\/O scheduler for solid state disks. In Proceedings of the Annual International Symposium on Computer Architecuture (ISCA\u201914). 289--300."},{"key":"e_1_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2013.6575359"},{"key":"e_1_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2008.4530774"},{"key":"e_1_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2006.1705197"},{"key":"e_1_2_1_22_1","volume-title":"Proceedings of the IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW\u201906)","author":"Lee Jae-Duk","year":"2006","unstructured":"Jae-Duk Lee , Chi-Kyung Lee , Myung-Won Lee , Han-Soo Kim , Kyu-Charn Park , and Won-Seong Lee . 2006 . A new programming disturbance phenomenon in NAND flash memory by source\/drain hot-electrons generated by GIDL current . In Proceedings of the IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW\u201906) . 31--33. Jae-Duk Lee, Chi-Kyung Lee, Myung-Won Lee, Han-Soo Kim, Kyu-Charn Park, and Won-Seong Lee. 2006. A new programming disturbance phenomenon in NAND flash memory by source\/drain hot-electrons generated by GIDL current. In Proceedings of the IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW\u201906). 31--33."},{"key":"e_1_2_1_23_1","first-page":"1","article-title":"Analysis of failure mechanisms and extraction of activation energies () in 21-nm NAND flash cells","volume":"34","author":"Lee Kyunghwan","year":"2013","unstructured":"Kyunghwan Lee , Myounggon Kang , Seongjun Seo , Dong-Hua Li , Jungki Kim , and Hyungcheol Shin . 2013 . Analysis of failure mechanisms and extraction of activation energies () in 21-nm NAND flash cells . IEEE Electr. Device Lett. 34 , 1 (Jan. 2013), 48--50. Kyunghwan Lee, Myounggon Kang, Seongjun Seo, Dong-Hua Li, Jungki Kim, and Hyungcheol Shin. 2013. Analysis of failure mechanisms and extraction of activation energies () in 21-nm NAND flash cells. IEEE Electr. Device Lett. 34, 1 (Jan. 2013), 48--50.","journal-title":"IEEE Electr. Device Lett."},{"key":"e_1_2_1_24_1","doi-asserted-by":"crossref","unstructured":"Rino Micheloni. 2016. 3D Flash Memories. Springer.   Rino Micheloni. 2016. 3D Flash Memories. Springer.","DOI":"10.1007\/978-94-017-7512-0"},{"key":"e_1_2_1_25_1","volume-title":"Inside NAND Flash Memories","author":"Micheloni Rino","unstructured":"Rino Micheloni , Luca Crippa , and Alessia Marelli . 2010. Inside NAND Flash Memories . Springer Science 8 Business Media. Rino Micheloni, Luca Crippa, and Alessia Marelli. 2010. Inside NAND Flash Memories. Springer Science 8 Business Media."},{"key":"e_1_2_1_26_1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409618"},{"key":"e_1_2_1_27_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.917558"},{"key":"e_1_2_1_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2200682"},{"key":"e_1_2_1_29_1","first-page":"11","article-title":"A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme","volume":"30","author":"Suh Kang-Deog","year":"1995","unstructured":"Kang-Deog Suh , Byung-Hoon Suh , Young-Ho Lim , Jin-Ki Kim , Young-Joon Choi , Yong-Nam Koh , Sung-Soo Lee , Suk-Chon Kwon , Byung-Soon Choi , Jin-Sun Yum , Jung-Hyuk Choi , Jang-Rae Kim , and Hyung-Kyu Lim . 1995 . A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme . IEEE J. Solid-State Circ. 30 , 11 (Aug. 1995), 1149--1156. Kang-Deog Suh, Byung-Hoon Suh, Young-Ho Lim, Jin-Ki Kim, Young-Joon Choi, Yong-Nam Koh, Sung-Soo Lee, Suk-Chon Kwon, Byung-Soon Choi, Jin-Sun Yum, Jung-Hyuk Choi, Jang-Rae Kim, and Hyung-Kyu Lim. 1995. A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme. IEEE J. Solid-State Circ. 30, 11 (Aug. 1995), 1149--1156.","journal-title":"IEEE J. Solid-State Circ."},{"key":"e_1_2_1_30_1","volume-title":"Technical Digest of the International Electron Devices Meeting (IEDM\u201910)","author":"Whang Sung-Jin","year":"2010","unstructured":"Sung-Jin Whang , Ki-Hong Lee , Dae-Gyu Shin , Beom-Yong Kim , Min-Soo Kim , Jin-Ho Bin , Ji-Hye Han , Sung-Jun Kim , Bo-Mi Lee , Young-Kyun Jung , Sung-Yoon Cho , Chang-Hee Shin , Hyun-Seung Yoo , Sang-Moo Choi , Kwon Hong , Seiichi Aritome , Sung-Ki Park , and Sung-Joo Hong . 2010 . Novel 3-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell for 1Tb file storage application . 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In Technical Digest of the International Electron Devices Meeting (IEDM\u201910). 668--671."},{"key":"e_1_2_1_31_1","doi-asserted-by":"publisher","DOI":"10.5555\/2555754.2555760"},{"key":"e_1_2_1_32_1","doi-asserted-by":"publisher","DOI":"10.1145\/3078505.3078550"},{"key":"e_1_2_1_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2011.5873206"},{"key":"e_1_2_1_34_1","volume-title":"Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201913)","author":"Zhao Kai","year":"2013","unstructured":"Kai Zhao , Wenzhe Zhao , Hongbin Sun , Tong Zhang , Xiaodong Zhang , and Nanning Zheng . 2013 . LDPC-in-SSD: Making advanced error correction codes work effectively in solid state drives . In Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201913) . 243--256. Kai Zhao, Wenzhe Zhao, Hongbin Sun, Tong Zhang, Xiaodong Zhang, and Nanning Zheng. 2013. LDPC-in-SSD: Making advanced error correction codes work effectively in solid state drives. In Proceedings of the USENIX Conference on File and Storage Technologies (FAST\u201913). 243--256."},{"key":"e_1_2_1_35_1","doi-asserted-by":"publisher","DOI":"10.1145\/2741948.2741949"}],"container-title":["ACM Transactions on Storage"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3162616","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3162616","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T19:07:29Z","timestamp":1750273649000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3162616"}},"subtitle":["Observations, Analyses, and Implications"],"short-title":[],"issued":{"date-parts":[[2018,4,12]]},"references-count":35,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2018,5,31]]}},"alternative-id":["10.1145\/3162616"],"URL":"https:\/\/doi.org\/10.1145\/3162616","relation":{},"ISSN":["1553-3077","1553-3093"],"issn-type":[{"value":"1553-3077","type":"print"},{"value":"1553-3093","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,4,12]]},"assertion":[{"value":"2017-06-01","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2017-11-01","order":1,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2018-04-12","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}