{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,12]],"date-time":"2026-02-12T11:35:40Z","timestamp":1770896140577,"version":"3.50.1"},"publisher-location":"New York, NY, USA","reference-count":25,"publisher":"ACM","license":[{"start":{"date-parts":[[2018,11,5]],"date-time":"2018-11-05T00:00:00Z","timestamp":1541376000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2018,11,5]]},"DOI":"10.1145\/3240765.3240827","type":"proceedings-article","created":{"date-parts":[[2018,11,6]],"date-time":"2018-11-06T13:36:57Z","timestamp":1541511417000},"page":"1-6","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":14,"title":["Mixed-cell-height placement considering drain-to-drain abutment"],"prefix":"10.1145","author":[{"given":"Yu-Wei","family":"Tseng","sequence":"first","affiliation":[{"name":"National Taiwan University, Taipei, Taiwan"}]},{"given":"Yao-Wen","family":"Chang","sequence":"additional","affiliation":[{"name":"National Taiwan University, Taipei, Taiwan"}]}],"member":"320","published-online":{"date-parts":[[2018,11,5]]},"reference":[{"key":"e_1_3_2_1_1_1","unstructured":"2017 ICCAD Multi-Deck Standard Cell Legalization Contest. http:\/\/cad-contest-2017.el.cycu.edu.tw\/."},{"key":"e_1_3_2_1_2_1","unstructured":"Open-wbo http:\/\/http:\/\/sat.inesc-id_pt\/open-wbo\/."},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/MSPEC.2011.6056626"},{"key":"e_1_3_2_1_4_1","first-page":"131","volume-title":"Proceedings of IEEE Symposium on VLSI Technology","author":"Auth C.","year":"2012","unstructured":"C. Auth. C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. Glassman, and et al. A 22nm high Performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. Proceedings of IEEE Symposium on VLSI Technology, pages 131--132, 2012."},{"key":"e_1_3_2_1_5_1","first-page":"72680c","volume-title":"Nano- and Micro-Smart Systems","author":"Baek S.-H.","year":"2008","unstructured":"S.-H. Baek, H.-Y. Kim, Y.-K. Lee, D.-Y. Jin, S.-C. Park, and J.-D. Cho. Ultra high density standard cell library using multi-height cell structure. Smart Materials, Nano- and Micro-Smart Systems, pages 72680c--72680C, 2008."},{"key":"e_1_3_2_1_6_1","volume-title":"Numerical Linear Algebra with Applications","author":"Bai Z.-Z.","year":"2010","unstructured":"Z.-Z. Bai. Modulus-based matrix splitting iteration methods for linear complementarity problems. Numerical Linear Algebra with Applications, 2010."},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1007\/s00211-005-0643-0"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1145\/3061639.3062330"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.5555\/1614191"},{"key":"e_1_3_2_1_10_1","doi-asserted-by":"publisher","DOI":"10.5555\/2840819.2840938"},{"key":"e_1_3_2_1_11_1","first-page":"357","volume-title":"Proceedings of IEEE International Electron Devices Meeting","author":"Dombrowski K.","year":"1999","unstructured":"K. Dombrowski, A. Fischer, B. Dietrich, and et al. Determination of stress in shallow trench isolation for deep submicron mos devices by UV raman spectroscopy. Proceedings of IEEE International Electron Devices Meeting, pages 357--360, 1999."},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.5555\/2616606.2617110"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.5555\/3199700.3199789"},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.5555\/2840819.2840940"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1145\/2591513.2591542"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2016.7428010"},{"key":"e_1_3_2_1_17_1","doi-asserted-by":"publisher","DOI":"10.1145\/2966986.2967055"},{"key":"e_1_3_2_1_18_1","first-page":"1","volume-title":"Proceedings of Germanium Technology and Device Meeting","author":"Munkang Choi L. S.","year":"2012","unstructured":"L. S. Munkang Choi, Victor Moroz and O. Penzin. 14 nm FinFET stress engineering with epitaxial SiGe source\/drain. In Proceedings of Germanium Technology and Device Meeting, pages 1--2, 2012."},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898045"},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898038"},{"key":"e_1_3_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2017.7858364"},{"key":"e_1_3_2_1_22_1","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2004.831522"},{"key":"e_1_3_2_1_23_1","doi-asserted-by":"publisher","DOI":"10.5555\/2843514"},{"key":"e_1_3_2_1_24_1","doi-asserted-by":"publisher","DOI":"10.5555\/3199700.3199709"},{"key":"e_1_3_2_1_25_1","volume-title":"Exact algorithms for MAX-SAT. Electronic Notes in Theoretical Computer Science, page 86(1)","author":"Zhang S. H.","year":"2003","unstructured":"S. H. Zhang, H. and F. Manya. Exact algorithms for MAX-SAT. Electronic Notes in Theoretical Computer Science, page 86(1), 2003."}],"event":{"name":"ICCAD '18: IEEE\/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN","location":"San Diego California","acronym":"ICCAD '18","sponsor":["IEEE-EDS Electronic Devices Society","IEEE CAS","IEEE CEDA"]},"container-title":["Proceedings of the International Conference on Computer-Aided Design"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3240765.3240827","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3240765.3240827","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T00:57:33Z","timestamp":1750208253000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3240765.3240827"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11,5]]},"references-count":25,"alternative-id":["10.1145\/3240765.3240827","10.1145\/3240765"],"URL":"https:\/\/doi.org\/10.1145\/3240765.3240827","relation":{},"subject":[],"published":{"date-parts":[[2018,11,5]]},"assertion":[{"value":"2018-11-05","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}