{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T04:24:08Z","timestamp":1750220648466,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":21,"publisher":"ACM","license":[{"start":{"date-parts":[[2020,11,6]],"date-time":"2020-11-06T00:00:00Z","timestamp":1604620800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2020,11,6]]},"DOI":"10.1145\/3443467.3443905","type":"proceedings-article","created":{"date-parts":[[2021,2,1]],"date-time":"2021-02-01T23:48:19Z","timestamp":1612223299000},"page":"1065-1069","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":1,"title":["Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode"],"prefix":"10.1145","author":[{"given":"Meng","family":"Liu","sequence":"first","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Wu","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xintian","family":"Zhou","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jie","family":"Cao","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Sun","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lihao","family":"Wang","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2021,2]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1109\/PCCON.2007.372991"},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMFEDK.2014.6867086"},{"key":"e_1_3_2_1_3_1","first-page":"863","volume-title":"IPEMC 2004","volume":"2","author":"Sheng K.","year":"2004","unstructured":"K. Sheng, \"A MOS-controlled diode (MCD) for power integrated circuits,\" The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004., Xi'an, 2004, pp. 863--867 Vol.2."},{"key":"e_1_3_2_1_4_1","first-page":"84","volume-title":"Polyana Svalyava","author":"Domasevich K.","year":"2013","unstructured":"K. Domasevich, V. Nelayev, V. Solodukha and A. Turtsevich, \"Comparative analysis of modern schottky diode structures. Design and application issues,\" 2013 12th International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics (CADSM), Polyana Svalyava, 2013, pp. 84--86."},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCCAS.2018.8769210"},{"key":"e_1_3_2_1_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2007.912752"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.03.006"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2647603"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2703597"},{"key":"e_1_3_2_1_10_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2703597"},{"key":"e_1_3_2_1_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2647603"},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2009.5158017"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.1109\/PEDS.2003.1282685"},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1049\/el:20000647"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.4218\/etrij.16.2515.0024"},{"key":"e_1_3_2_1_16_1","volume-title":"Sep. 10","author":"Chang P.","year":"2002","unstructured":"P. Chang, G.-C. Chern, W. Y. W. Hsueh, and V. Rodov, \"Method of fabricating power rectifier device to vary operating parameters and resulting device,\" U.S. Patent 6448160, Sep. 10, 2002."},{"key":"e_1_3_2_1_17_1","first-page":"B2","article-title":"Process for manufactuirng super-barrier rectifiers","volume":"9018","author":"Lizio F.","year":"2015","unstructured":"F. Lizio, \"Process for manufactuirng super-barrier rectifiers,\" U.S. Patent 9018 048B2, Apr. 28, 2015.","journal-title":"U.S. Patent"},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2017.7930965"},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1987.26676"},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2982684"},{"key":"e_1_3_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2007.895716"}],"event":{"name":"EITCE 2020: 2020 4th International Conference on Electronic Information Technology and Computer Engineering","acronym":"EITCE 2020","location":"Xiamen China"},"container-title":["Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3443467.3443905","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3443467.3443905","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,17]],"date-time":"2025-06-17T22:02:19Z","timestamp":1750197739000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3443467.3443905"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,6]]},"references-count":21,"alternative-id":["10.1145\/3443467.3443905","10.1145\/3443467"],"URL":"https:\/\/doi.org\/10.1145\/3443467.3443905","relation":{},"subject":[],"published":{"date-parts":[[2020,11,6]]},"assertion":[{"value":"2021-02-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}