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Syst."],"published-print":{"date-parts":[[2022,3,31]]},"abstract":"<jats:p>\n            <jats:bold>Magneto-Electric FET<\/jats:bold>\n            (\n            <jats:bold>MEFET<\/jats:bold>\n            ) is a recently developed post-CMOS FET, which offers intriguing characteristics for high-speed and low-power design in both logic and memory applications. In this article, we present\n            <jats:italic>MeF-RAM<\/jats:italic>\n            , a non-volatile cache memory design based on\n            <jats:bold>2-Transistor-1-MEFET<\/jats:bold>\n            (\n            <jats:bold>2T1M<\/jats:bold>\n            ) memory bit-cell with separate read and write paths. We show that with proper co-design across MEFET device, memory cell circuit, and array architecture, MeF-RAM is a promising candidate for fast\n            <jats:bold>non-volatile memory<\/jats:bold>\n            (\n            <jats:bold>NVM<\/jats:bold>\n            ). To evaluate its cache performance in the memory system, we, for the first time, build a device-to-architecture cross-layer evaluation framework to quantitatively analyze and benchmark the MeF-RAM design with other memory technologies, including both volatile memory (i.e., SRAM, eDRAM) and other popular non-volatile emerging memory (i.e., ReRAM, STT-MRAM, and SOT-MRAM). The experiment results for the PARSEC benchmark suite indicate that, as an L2 cache memory, MeF-RAM reduces\n            <jats:bold>Energy Area Latency<\/jats:bold>\n            (\n            <jats:bold>EAT<\/jats:bold>\n            ) product on average by ~98% and ~70% compared with typical 6T-SRAM and 2T1R SOT-MRAM counterparts, respectively.\n          <\/jats:p>","DOI":"10.1145\/3484222","type":"journal-article","created":{"date-parts":[[2021,11,2]],"date-time":"2021-11-02T20:19:32Z","timestamp":1635884372000},"page":"1-18","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":12,"title":["MeF-RAM: A New Non-Volatile Cache Memory Based on Magneto-Electric FET"],"prefix":"10.1145","volume":"27","author":[{"given":"Shaahin","family":"Angizi","sequence":"first","affiliation":[{"name":"School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona"}]},{"given":"Navid","family":"Khoshavi","sequence":"additional","affiliation":[{"name":"AMD, Orlando, Florida"}]},{"given":"Andrew","family":"Marshall","sequence":"additional","affiliation":[{"name":"Electrical and Computer Engineering Department, University of Texas at Dallas, Richardson, Texas"}]},{"given":"Peter","family":"Dowben","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy, University of Nebraska\u2013Lincoln, Lincoln, Nebraska"}]},{"given":"Deliang","family":"Fan","sequence":"additional","affiliation":[{"name":"School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona"}]}],"member":"320","published-online":{"date-parts":[[2021,11,2]]},"reference":[{"key":"e_1_3_2_2_1","unstructured":"[1]2011. 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