{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,10]],"date-time":"2026-04-10T00:49:59Z","timestamp":1775782199617,"version":"3.50.1"},"reference-count":40,"publisher":"Association for Computing Machinery (ACM)","issue":"2","license":[{"start":{"date-parts":[[2022,2,8]],"date-time":"2022-02-08T00:00:00Z","timestamp":1644278400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["61872299, and 62032019"],"award-info":[{"award-number":["61872299, and 62032019"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Chongqing Graduate Research and Innovation Project","award":["CYB21110"],"award-info":[{"award-number":["CYB21110"]}]},{"name":"Chongqing Talent","award":["CQYC202005094"],"award-info":[{"award-number":["CQYC202005094"]}]},{"name":"Natural Science Foundation Project of CQ CSTC","award":["cstc2021ycjh-bgzxm0199"],"award-info":[{"award-number":["cstc2021ycjh-bgzxm0199"]}]},{"name":"Opening Project of State Key Laboratory for and Novel Software Technology","award":["KFKT2021B06"],"award-info":[{"award-number":["KFKT2021B06"]}]}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":["ACM Trans. Embed. Comput. Syst."],"published-print":{"date-parts":[[2022,3,31]]},"abstract":"<jats:p>\n            Read disturb is a circuit-level noise in flash-based Solid-State Drives (SSDs), induced by intensive read requests, which may result in unexpected read errors. The approach of read refresh (RR) is commonly adopted to mitigate its negative effects by unconditionally migrating all valid data pages in the RR block to another new block. However, routine RR operations greatly impact the I\/O responsiveness of SSDs, because the processing on normal I\/O requests must be blocked at the same time. To further reduce the negative effects of read refresh, this article proposes a read refresh scheduling and data reallocation method to deal with two primary issues with respect to an RR operation, including where to place data pages and when to trigger page migrations. Specifically, we first construct a data reallocation model to match the data pages in the RR block and the destination blocks for addressing the issue of where to place the data. The model considers not only the read hotness of pages in the RR block, but also the accumulated read counts of the destination blocks. Moreover, for addressing the issue of when to trigger data migrations, we build a timing decision model to determine the time points for completing page migrations by considering the factors of the intensity of I\/Os and the disturb situation on the RR block. Through a series of simulation experiments based on several realistic disk traces, we illustrate that the proposed RR scheduling and data reallocation mechanism can noticeably reduce the read errors by more than\n            <jats:monospace>10.3%<\/jats:monospace>\n            , on average, and the long-tail latency by between\n            <jats:monospace>43.9%<\/jats:monospace>\n            and\n            <jats:monospace>64.0%<\/jats:monospace>\n            at the 99.99th percentile, in contrast to state-of-the-art methods.\n          <\/jats:p>\n          <jats:p\/>","DOI":"10.1145\/3495254","type":"journal-article","created":{"date-parts":[[2022,2,8]],"date-time":"2022-02-08T15:11:51Z","timestamp":1644333111000},"page":"1-27","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":6,"title":["Read Refresh Scheduling and Data Reallocation against Read Disturb in SSDs"],"prefix":"10.1145","volume":"21","author":[{"given":"Jianwei","family":"Liao","sequence":"first","affiliation":[{"name":"Southwest University of China, Beibei, Chongqing, China"}]},{"given":"Jun","family":"Li","sequence":"additional","affiliation":[{"name":"Southwest University of China, Beibei, Chongqing, China"}]},{"given":"Mingwang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Southwest University of China, Beibei, Chongqing, China"}]},{"given":"Zhibing","family":"Sha","sequence":"additional","affiliation":[{"name":"Southwest University of China, Beibei, Chongqing, China"}]},{"given":"Zhigang","family":"Cai","sequence":"additional","affiliation":[{"name":"Southwest University of China, Beibei, Chongqing, China"}]}],"member":"320","published-online":{"date-parts":[[2022,2,8]]},"reference":[{"key":"e_1_3_2_2_2","doi-asserted-by":"publisher","DOI":"10.5555\/3323298.3323325"},{"key":"e_1_3_2_3_2","doi-asserted-by":"crossref","unstructured":"S. Aritome. 2015. NAND Flash Memory Technologies. John Wiley & Sons.","DOI":"10.1002\/9781119132639"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1145\/3292040.3219659"},{"key":"e_1_3_2_5_2","doi-asserted-by":"crossref","unstructured":"Y. Cai O. Mutlu E. F. Haratsch et\u00a0al. 2013. Program interference in MLC NAND flash memory: Characterization modeling and mitigation. In ICCD .","DOI":"10.1109\/ICCD.2013.6657034"},{"key":"e_1_3_2_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2015.2504868"},{"key":"e_1_3_2_7_2","unstructured":"Y. Cai Y. Luo S. Ghose et\u00a0al. 2018. Read disturb errors in MLC NAND flash memory. arXiv preprint arXiv:1805.03283."},{"key":"e_1_3_2_8_2","doi-asserted-by":"publisher","DOI":"10.5555\/2208461.2208463"},{"key":"e_1_3_2_9_2","doi-asserted-by":"crossref","unstructured":"Y. Deguchi T. Tokutomi and K. Takeuchi. 2016. System-level error correction by read-disturb error model of 1Xnm TLC NAND flash memory for read-intensive enterprise solid-state drives (SSDs). In IRPS .","DOI":"10.1109\/IRPS.2016.7574622"},{"key":"e_1_3_2_10_2","doi-asserted-by":"crossref","unstructured":"A. Kobayashi H. Watanabe Y. Sakaki et\u00a0al. 2017. Investigate of read disturb error in 1Ynm NAND flash memories for system level solution. In IRPS .","DOI":"10.1109\/IRPS.2017.7936388"},{"key":"e_1_3_2_11_2","doi-asserted-by":"crossref","unstructured":"H. Watanabe Y. Deguchi A. Kobayashi et\u00a0al. 2018. System-level read disturb suppression techniques of TLC NAND flash memories for read-hot\/cold data mixed applications. Solid-State Electron . DOI:https:\/\/doi.org\/10.1016\/j.sse.2018.05.004","DOI":"10.1016\/j.sse.2018.05.004"},{"key":"e_1_3_2_12_2","doi-asserted-by":"publisher","DOI":"10.1145\/1740390.1740402"},{"key":"e_1_3_2_13_2","unstructured":"Micron Technical Note (No. TN-29-27): Design and Use Considerations for NAND Flash Memory. Retrieved from https:\/\/media-www.micron.com\/-\/media\/client\/global\/documents\/products\/technical-note\/nand-flash\/tn2917.pdf."},{"key":"e_1_3_2_14_2","doi-asserted-by":"publisher","DOI":"10.5555\/3358807.3358890"},{"key":"e_1_3_2_15_2","unstructured":"C. Manning. 2012. Yaffs NAND Flash Failure Mitigation. Retrieved from https:\/\/yaffs.net\/sites\/default\/files\/downloads\/YaffsNandFailureMitigation.pdf."},{"key":"e_1_3_2_16_2","doi-asserted-by":"crossref","unstructured":"W. Liu F. Wu M. Zhang et\u00a0al. 2019. Characterizing the reliability and threshold voltage shifting of 3D charge trap NAND flash. In DATE .","DOI":"10.23919\/DATE.2019.8714941"},{"key":"e_1_3_2_17_2","doi-asserted-by":"publisher","DOI":"10.1145\/3410332"},{"key":"e_1_3_2_18_2","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2012.6168954"},{"key":"e_1_3_2_19_2","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2015.49"},{"key":"e_1_3_2_20_2","doi-asserted-by":"crossref","unstructured":"T. Wu Y. Ma and L. Chang. 2018. Flash read disturb management using adaptive cell bit-density with in-place reprogramming. In DATE .","DOI":"10.23919\/DATE.2018.8342030"},{"key":"e_1_3_2_21_2","doi-asserted-by":"publisher","DOI":"10.1145\/2757667.2757679"},{"key":"e_1_3_2_22_2","doi-asserted-by":"publisher","DOI":"10.5555\/3130379.3130643"},{"key":"e_1_3_2_23_2","doi-asserted-by":"crossref","unstructured":"Y. Cai G. Yalcin O. Mutlu et\u00a0al. 2012. Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime. In ICCD .","DOI":"10.1109\/ICCD.2012.6378623"},{"key":"e_1_3_2_24_2","doi-asserted-by":"crossref","unstructured":"J. Guo Z. Chen D. Wang et\u00a0al. 2014. DPA: A data pattern aware error prevention technique for NAND flash lifetime extension. In ASP-DAC .","DOI":"10.1109\/ASPDAC.2014.6742955"},{"key":"e_1_3_2_25_2","unstructured":"J. Werner E. Cohen and T. Canepa. 2014. Read disturb handling for non-volatile solid state media. U.S. Patent Application 13\/729 966."},{"key":"e_1_3_2_26_2","unstructured":"Y. Seo J. Yun W. Lee et\u00a0al. 2013. Memory controller method of operating the same and memory system including the same U.S. Patent 14\/081 371."},{"key":"e_1_3_2_27_2","doi-asserted-by":"crossref","unstructured":"B. Huang J. Liao J. Li et\u00a0al. 2020. Read disturb-aware write scheduling and data reallocation in SSDs. In IEICE Electronics Express . DOI:https:\/\/doi.org\/10.1587\/elex.17.20200015","DOI":"10.1587\/elex.17.20200015"},{"key":"e_1_3_2_28_2","doi-asserted-by":"crossref","unstructured":"M. Zhao J. Li Z. Cai et\u00a0al. 2021. Block attribute-aware data reallocation to alleviate read disturb in SSDs. In DATE .","DOI":"10.23919\/DATE51398.2021.9474023"},{"key":"e_1_3_2_29_2","unstructured":"D. Bertsekas. Nonlinear Programming (3rd ed.). Athena Scientific."},{"key":"e_1_3_2_30_2","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2012.60"},{"key":"e_1_3_2_31_2","doi-asserted-by":"publisher","DOI":"10.1145\/3205289.3205319"},{"key":"e_1_3_2_32_2","doi-asserted-by":"publisher","DOI":"10.5555\/2591272.2591298"},{"key":"e_1_3_2_33_2","doi-asserted-by":"publisher","DOI":"10.1145\/3316781.3317759"},{"key":"e_1_3_2_34_2","doi-asserted-by":"crossref","unstructured":"J. Cui Y. Zhang L. Shi et\u00a0al. 2020. Leveraging partial-refresh for performance and lifetime improvement of 3D NAND flash memory in cyber-physical systems. Journal of Systems Architecture . DOI:https:\/\/doi.org\/10.1016\/j.sysarc.2019.101685","DOI":"10.1016\/j.sysarc.2019.101685"},{"key":"e_1_3_2_35_2","unstructured":"Search Engine I\/O. Retrieved from http:\/\/traces.cs.umass.edu\/index.php\/Storage\/Storage."},{"key":"e_1_3_2_36_2","unstructured":"Microsoft Production Server Traces. Retrieved from http:\/\/iotta.snia.org\/traces\/158."},{"key":"e_1_3_2_37_2","doi-asserted-by":"publisher","DOI":"10.1145\/1416944.1416949"},{"key":"e_1_3_2_38_2","doi-asserted-by":"publisher","DOI":"10.1145\/3423137"},{"key":"e_1_3_2_39_2","unstructured":"YCSB RocksDB SSD Traces. 2020. Retrieved from http:\/\/iotta.snia.org\/traces\/28568."},{"key":"e_1_3_2_40_2","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2009.134"},{"key":"e_1_3_2_41_2","doi-asserted-by":"crossref","unstructured":"C. Lee T. Kumano T. Matsuki et\u00a0al. 2017. Understanding storage traffic characteristics on enterprise virtual desktop infrastructure. In SYSTOR .","DOI":"10.1145\/3078468.3078479"}],"container-title":["ACM Transactions on Embedded Computing Systems"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3495254","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3495254","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,17]],"date-time":"2025-06-17T17:49:23Z","timestamp":1750182563000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3495254"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,2,8]]},"references-count":40,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2022,3,31]]}},"alternative-id":["10.1145\/3495254"],"URL":"https:\/\/doi.org\/10.1145\/3495254","relation":{},"ISSN":["1539-9087","1558-3465"],"issn-type":[{"value":"1539-9087","type":"print"},{"value":"1558-3465","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,2,8]]},"assertion":[{"value":"2021-05-01","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2021-11-01","order":1,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2022-02-08","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}