{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T04:21:28Z","timestamp":1750220488906,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":15,"publisher":"ACM","license":[{"start":{"date-parts":[[2021,10,22]],"date-time":"2021-10-22T00:00:00Z","timestamp":1634860800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2021,10,22]]},"DOI":"10.1145\/3501409.3501666","type":"proceedings-article","created":{"date-parts":[[2022,1,2]],"date-time":"2022-01-02T06:18:06Z","timestamp":1641104286000},"page":"1449-1454","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping"],"prefix":"10.1145","author":[{"given":"Chen","family":"Gao","sequence":"first","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}]},{"given":"Yu","family":"Wu","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}]},{"given":"Yueyang","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Power Semiconductor, Future Science & Technology, Park Beijing, China"}]},{"given":"Xintian","family":"Zhou","sequence":"additional","affiliation":[{"name":"Beijing University of Technology, Beijing, China"}]},{"given":"Kesheng","family":"Wang","sequence":"additional","affiliation":[{"name":"State Grid Shanxi Electric Power Company, Maintenance Branch, Shanxi, China"}]},{"given":"Zheng","family":"Zhong","sequence":"additional","affiliation":[{"name":"Beijing Universitiy of Technology, Beijing, China"}]}],"member":"320","published-online":{"date-parts":[[2021,12,31]]},"reference":[{"key":"e_1_3_2_1_1_1","volume-title":"VOL.40, NO.11","author":"Linnros Jan","year":"1993","unstructured":"Jan Linnros, Peter Norlin, Anders Hallen, \"A New Technique for Depth Resolved Carrier Recombination Measurements Applied to Proton Irradiated Thyristors\", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.40, NO.11, NOVEMBER, 1993."},{"key":"e_1_3_2_1_2_1","volume-title":"An Experimental Approach","author":"Daliento Santolo","year":"1999","unstructured":"Santolo Daliento, Annunziata Sanseverino, Paolo Spirito, Luigi Zeni, \"Parametric Description of the Effect of Electron Irradiation on Recombination Lifetime in Silicon Layers: An Experimental Approach\", IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL.14, NO.1, JANUARY, 1999."},{"key":"e_1_3_2_1_3_1","volume-title":"AUGUST","author":"Daliento S.","year":"1999","unstructured":"S. Daliento, A. Sanseverino, P. Spirito, \"An Improved Model for Extraction of Strongly Spatial Dependent Lifetimes with the AC Lifetime Profiling Technique\", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.46, NO.8, AUGUST, 1999."},{"key":"e_1_3_2_1_4_1","first-page":"2295","volume-title":"VOL.42, NO.12","author":"V.RAINER, M.SAGGIO, F.FRISINA, E.RIMINI","year":"1998","unstructured":"V.RAINER, M.SAGGIO, F.FRISINA, E.RIMINI, \"VOIDS IN SILICON POWER DEVICES\", Solid State Electronics, VOL.42, NO.12, pp.2295--2301, 1998."},{"key":"e_1_3_2_1_5_1","volume-title":"ISPSD","author":"Deliento Santolo","year":"2000","unstructured":"Santolo Deliento, Annunziata Sanseverino, Paolo Spirito, Giovanni Busatto, Jeff Wiss, \"Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices\", ISPSD 2000, Toulouse, France, May 22--25."},{"key":"e_1_3_2_1_6_1","first-page":"1429","volume-title":"VOL.37, NO.7","author":"Spirito P.","year":"1994","unstructured":"P. Spirito, A. Sanseverino, \"Determination of the Energy Levels of the Recombination Centers in Low-doped Si Layers by Temperature Dependence of Recombination Lifetime\", Solid State Electron, VOL.37, NO.7, pp.1429--1435, 1994."},{"issue":"12","key":"e_1_3_2_1_7_1","volume":"43","author":"Vobesky J.","year":"1996","unstructured":"J.Vobesky, P.Hazdra, J.Homola, \"Optimisation of Power Diode Characterisations by Means of Ion Irradiation\", IEEE Trans. On Electron Devices, VOL.43, NO.12, Decemeber, 1996.","journal-title":"Trans. On Electron Devices, VOL"},{"key":"e_1_3_2_1_8_1","volume-title":"Prague, 2--4","author":"Rubes J.","year":"1998","unstructured":"J. Rubes, P. Hazdra, J. Vobesky, \"Measurement of Reverse Current for Radiation Defect Profilling\", Proceeding of 4th ISPS98, Prague, 2--4 September, 1998."},{"unstructured":"J.Vobecky P.Hazdra \"Fast Recovery Diode with Local Lifetime Control Using High-Energy Platinum and Helium Implantation\" IEEE.","key":"e_1_3_2_1_9_1"},{"key":"e_1_3_2_1_10_1","first-page":"125","volume-title":"The Conference, MIEL 2004","author":"Vobecky J.","year":"2004","unstructured":"J.Vobecky, P.Hazdra, \"Platinum Implantation Versus Platinum Silicide for the Local Lifetime Control of Power P-i-N Diode\", The Conference, MIEL 2004, VOL.1, pp.125--128, 2004."},{"key":"e_1_3_2_1_11_1","volume-title":"Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's, May 23--26","author":"Matthias S.","year":"2011","unstructured":"S.Matthias, J.Vobecky, C.Corvasce, A.Kopta, M.Cammarata, \"Field Shielded Anode(FSA) Concept Enabling Higher Temperature Operation of Fast Recovery Diodes\", Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's, May 23--26, 2011, San Diego, CA."},{"doi-asserted-by":"publisher","key":"e_1_3_2_1_12_1","DOI":"10.1109\/T-ED.1977.18803"},{"doi-asserted-by":"publisher","key":"e_1_3_2_1_13_1","DOI":"10.1063\/1.362633"},{"doi-asserted-by":"publisher","key":"e_1_3_2_1_14_1","DOI":"10.1109\/T-ED.1987.23347"},{"doi-asserted-by":"publisher","key":"e_1_3_2_1_15_1","DOI":"10.1109\/16.469398"}],"event":{"acronym":"EITCE 2021","name":"EITCE 2021: 2021 5th International Conference on Electronic Information Technology and Computer Engineering","location":"Xiamen China"},"container-title":["Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3501409.3501666","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3501409.3501666","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,17]],"date-time":"2025-06-17T20:49:16Z","timestamp":1750193356000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3501409.3501666"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,10,22]]},"references-count":15,"alternative-id":["10.1145\/3501409.3501666","10.1145\/3501409"],"URL":"https:\/\/doi.org\/10.1145\/3501409.3501666","relation":{},"subject":[],"published":{"date-parts":[[2021,10,22]]},"assertion":[{"value":"2021-12-31","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}