{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,10]],"date-time":"2026-06-10T12:25:35Z","timestamp":1781094335053,"version":"3.54.1"},"publisher-location":"New York, NY, USA","reference-count":25,"publisher":"ACM","license":[{"start":{"date-parts":[[2022,6,6]],"date-time":"2022-06-06T00:00:00Z","timestamp":1654473600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"funder":[{"name":"Open Project of the State Key Laboratory of Computing Institute of Chinese Academy of Sciences","award":["CARCHA202101"],"award-info":[{"award-number":["CARCHA202101"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62174001"],"award-info":[{"award-number":["62174001"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"JSPS Grant-in-Aid for Scientific Research (B)","award":["21H03411"],"award-info":[{"award-number":["21H03411"]}]},{"name":"National Natural Science Foundation of China","award":["61974001"],"award-info":[{"award-number":["61974001"]}]},{"name":"National Natural Science Foundation of China","award":["61874156"],"award-info":[{"award-number":["61874156"]}]},{"name":"NSFC-JSPS Exchange Program","award":["62111540164"],"award-info":[{"award-number":["62111540164"]}]}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2022,6,6]]},"DOI":"10.1145\/3526241.3530312","type":"proceedings-article","created":{"date-parts":[[2022,6,2]],"date-time":"2022-06-02T14:37:09Z","timestamp":1654180629000},"page":"261-266","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace Applications"],"prefix":"10.1145","author":[{"given":"Aibin","family":"Yan","sequence":"first","affiliation":[{"name":"Anhui University, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhihui","family":"He","sequence":"additional","affiliation":[{"name":"Anhui University, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Xiang","sequence":"additional","affiliation":[{"name":"Anhui University, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jie","family":"Cui","sequence":"additional","affiliation":[{"name":"Anhui University, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yong","family":"Zhou","sequence":"additional","affiliation":[{"name":"Anhui University, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhengfeng","family":"Huang","sequence":"additional","affiliation":[{"name":"Hefei University of Technology, Hefei, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Patrick","family":"Girard","sequence":"additional","affiliation":[{"name":"University of Montpellier \/ CNRS, Montpellier, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoqing","family":"Wen","sequence":"additional","affiliation":[{"name":"Kyushu Institute of Technology, Fukuoka, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"320","published-online":{"date-parts":[[2022,6,6]]},"reference":[{"key":"e_1_3_2_2_1_1","doi-asserted-by":"publisher","DOI":"10.1109\/TAES.2021.3103586"},{"key":"e_1_3_2_2_2_1","first-page":"19","volume-title":"IEEE Asian Test Symposium","author":"Liang H.","year":"2014","unstructured":"H. Liang , Z. Wang , Z. Huang , IEEE Asian Test Symposium , pp. 19 -- 24 , 2014 . H. Liang, Z. Wang, Z. Huang, et al, \"Design of a Radiation Hardened Latch for Low-power Circuits,\" IEEE Asian Test Symposium, pp.19--24, 2014."},{"key":"e_1_3_2_2_3_1","first-page":"1","article-title":"Scaling Trends and Bias Dependence of the Soft Error Rate of 16 nm and 7 nm FinFET SRAMs","author":"Narasimham B.","year":"2018","unstructured":"B. Narasimham , S. Gupta , D. Reed , , \" Scaling Trends and Bias Dependence of the Soft Error Rate of 16 nm and 7 nm FinFET SRAMs ,\" International Reliability Physics Symposium , pp. 1 -- 4 , 2018 . B. Narasimham, S. Gupta, D. Reed, et al, \"Scaling Trends and Bias Dependence of the Soft Error Rate of 16 nm and 7 nm FinFET SRAMs,\" International Reliability Physics Symposium, pp. 1--4, 2018.","journal-title":"International Reliability Physics Symposium"},{"key":"e_1_3_2_2_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2016.2620165"},{"key":"e_1_3_2_2_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2260357"},{"key":"e_1_3_2_2_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/TETC.2020.3025584"},{"key":"e_1_3_2_2_7_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10836-015-5533-5"},{"key":"e_1_3_2_2_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2020.2966200"},{"key":"e_1_3_2_2_9_1","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126616501632"},{"key":"e_1_3_2_2_10_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2959007"},{"key":"e_1_3_2_2_11_1","first-page":"107","volume-title":"F-DICE: A multiple node upset tolerant flip-flop for highly radioactive environments,\" in Proc. of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems","author":"Campitelli S.","year":"2013","unstructured":"S. Campitelli , M. Ottavi , S. Pontarelli , , \" F-DICE: A multiple node upset tolerant flip-flop for highly radioactive environments,\" in Proc. of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems , pp. 107 -- 111 , 2013 . S. Campitelli, M. Ottavi, S. Pontarelli, et al., \"F-DICE: A multiple node upset tolerant flip-flop for highly radioactive environments,\" in Proc. of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, pp. 107--111, 2013."},{"key":"e_1_3_2_2_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2009.2032090"},{"key":"e_1_3_2_2_13_1","first-page":"714","article-title":"A Novel Sort Error Hardened 10T SRAM Cells for Low Voltage Operation","author":"Jung I.","year":"2012","unstructured":"I. Jung , Y. Kim , and F. Lombardi , \" A Novel Sort Error Hardened 10T SRAM Cells for Low Voltage Operation ,\" IEEE International Midwest Symposium on Circuits and Systems , pp. 714 -- 717 , 2012 . I. Jung, Y. Kim, and F. Lombardi, \"A Novel Sort Error Hardened 10T SRAM Cells for Low Voltage Operation,\" IEEE International Midwest Symposium on Circuits and Systems, pp. 714--717, 2012.","journal-title":"IEEE International Midwest Symposium on Circuits and Systems"},{"key":"e_1_3_2_2_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2011.2167233"},{"issue":"1","key":"e_1_3_2_2_15_1","first-page":"1053","article-title":"Single Event Multiple Upset-Tolerant SRAM Cell Designs for Nano-Scale CMOS Technology","volume":"25","author":"Rajaei R.","year":"2017","unstructured":"R. Rajaei , B. Asgari , M. Tabandeh , , \" Single Event Multiple Upset-Tolerant SRAM Cell Designs for Nano-Scale CMOS Technology ,\" Turkish Journal of Electrical Engineering & Computer Sciences , vol. 25 , no. 1 , pp. 1053 -- 1047 , 2017 . R. Rajaei, B. Asgari, M. Tabandeh, et al., \"Single Event Multiple Upset-Tolerant SRAM Cell Designs for Nano-Scale CMOS Technology,\" Turkish Journal of Electrical Engineering & Computer Sciences, vol. 25, no. 1, pp. 1053--1047, 2017.","journal-title":"Turkish Journal of Electrical Engineering & Computer Sciences"},{"key":"e_1_3_2_2_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2788439"},{"key":"e_1_3_2_2_17_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2015.2456832"},{"key":"e_1_3_2_2_18_1","first-page":"288","article-title":"A Low Power Memory Cell Design for SEU Protection against Radiation Effects","author":"Shiyanovskii Y.","year":"2012","unstructured":"Y. Shiyanovskii , A. Rajendran , and C. Papachristou , \" A Low Power Memory Cell Design for SEU Protection against Radiation Effects ,\" IEEE NASA\/ESA Conference on Adaptive Hardware and Systems , pp. 288 -- 295 , 2012 . Y. Shiyanovskii, A. Rajendran, and C. Papachristou, \"A Low Power Memory Cell Design for SEU Protection against Radiation Effects,\" IEEE NASA\/ESA Conference on Adaptive Hardware and Systems, pp. 288--295, 2012.","journal-title":"IEEE NASA\/ESA Conference on Adaptive Hardware and Systems"},{"key":"e_1_3_2_2_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2593590"},{"key":"e_1_3_2_2_20_1","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2958109"},{"key":"e_1_3_2_2_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2872507"},{"key":"e_1_3_2_2_22_1","doi-asserted-by":"publisher","DOI":"10.1109\/TR.2018.2876243"},{"key":"e_1_3_2_2_23_1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2728180"},{"key":"e_1_3_2_2_24_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3018328"},{"key":"e_1_3_2_2_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2879341"}],"event":{"name":"GLSVLSI '22: Great Lakes Symposium on VLSI 2022","location":"Irvine CA USA","acronym":"GLSVLSI '22","sponsor":["SIGDA ACM Special Interest Group on Design Automation"]},"container-title":["Proceedings of the Great Lakes Symposium on VLSI 2022"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3526241.3530312","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3526241.3530312","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,17]],"date-time":"2025-06-17T19:02:16Z","timestamp":1750186936000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3526241.3530312"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,6]]},"references-count":25,"alternative-id":["10.1145\/3526241.3530312","10.1145\/3526241"],"URL":"https:\/\/doi.org\/10.1145\/3526241.3530312","relation":{},"subject":[],"published":{"date-parts":[[2022,6,6]]},"assertion":[{"value":"2022-06-06","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}