{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,29]],"date-time":"2026-04-29T19:10:11Z","timestamp":1777489811302,"version":"3.51.4"},"publisher-location":"New York, NY, USA","reference-count":52,"publisher":"ACM","license":[{"start":{"date-parts":[[2024,4,27]],"date-time":"2024-04-27T00:00:00Z","timestamp":1714176000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2024,4,27]]},"DOI":"10.1145\/3620665.3640372","type":"proceedings-article","created":{"date-parts":[[2024,4,22]],"date-time":"2024-04-22T14:18:06Z","timestamp":1713795486000},"page":"55-70","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":14,"title":["Achieving Near-Zero Read Retry for 3D NAND Flash Memory"],"prefix":"10.1145","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5828-3806","authenticated-orcid":false,"given":"Min","family":"Ye","sequence":"first","affiliation":[{"name":"City University of Hong Kong, Hong Kong, Hong Kong"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4579-4268","authenticated-orcid":false,"given":"Qiao","family":"Li","sequence":"additional","affiliation":[{"name":"Xiamen University, Xiamen, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3971-3123","authenticated-orcid":false,"given":"Yina","family":"Lv","sequence":"additional","affiliation":[{"name":"City University of Hong Kong, Hong Kong, Hong Kong"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6299-4683","authenticated-orcid":false,"given":"Jie","family":"Zhang","sequence":"additional","affiliation":[{"name":"Peking University, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1185-5667","authenticated-orcid":false,"given":"Tianyu","family":"Ren","sequence":"additional","affiliation":[{"name":"Department of Computer Science, City University of Hong Kong, Hong Kong, Hong Kong"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0732-7034","authenticated-orcid":false,"given":"Daniel","family":"Wen","sequence":"additional","affiliation":[{"name":"YEESTOR Microelectronics Co., Ltd, Shenzhen, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1974-0394","authenticated-orcid":false,"given":"Tei-Wei","family":"Kuo","sequence":"additional","affiliation":[{"name":"National Taiwan University, Taipei, Taiwan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6431-9868","authenticated-orcid":false,"given":"Chun Jason","family":"Xue","sequence":"additional","affiliation":[{"name":"City University of Hong Kong \/ Mohamed bin Zayed University of Artificial Intelligence, Hong Kong, Hong Kong"}]}],"member":"320","published-online":{"date-parts":[[2024,4,27]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW48823.2020.9108117"},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2017.2713127"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2017.61"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.5555\/2485288.2485597"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056062"},{"key":"e_1_3_2_1_6_1","first-page":"94","volume-title":"IEEE 30th International Conference on Computer Design (ICCD)","author":"Cai Yu","year":"2012","unstructured":"Yu Cai, Gulay Yalcin, Onur Mutlu, Erich F Haratsch, Adrian Cristal, Osman S Unsal, and Ken Mai. Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime. In IEEE 30th International Conference on Computer Design (ICCD), pages 94--101, 2012."},{"key":"e_1_3_2_1_7_1","first-page":"1","volume-title":"IEEE Symposium on VLSI Technology","author":"Choi Bongsik","year":"2016","unstructured":"Bongsik Choi, Sang Hyun Jang, Jinsu Yoon, Juhee Lee, Minsu Jeon, Yongwoo Lee, Jungmin Han, Jieun Lee, Dong Myong Kim, Dae Hwan Kim, et al. Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-d nand flash memory. In IEEE Symposium on VLSI Technology, pages 1--2, 2016."},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/LCOMM.2019.2900677"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2023.3280262"},{"key":"e_1_3_2_1_10_1","first-page":"222","volume-title":"IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)","author":"Ho Kin-Chu","year":"2013","unstructured":"Kin-Chu Ho, Po-Chao Fang, Hsiang-Pang Li, Cheng-Yuan Michael Wang, and Hsie-Chia Chang. A 45nm 6b\/cell charge-trapping flash memory using LDPC-based ECC and drift-immune soft-sensing engine. In IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pages 222--223, 2013."},{"key":"e_1_3_2_1_11_1","first-page":"133","volume-title":"20th USENIX Conference on File and Storage Technologies (FAST)","author":"Hong Duwon","year":"2022","unstructured":"Duwon Hong, Myungsuk Kim, Geonhee Cho, Dusol Lee, and Jihong Kim. Guardederase: Extending ssd lifetimes by protecting weak word-lines. In 20th USENIX Conference on File and Storage Technologies (FAST), pages 133--146, 2022."},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2413841"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993609"},{"key":"e_1_3_2_1_14_1","first-page":"117","volume-title":"20th USENIX Conference on File and Storage Technologies (FAST)","author":"Jaffer Shehbaz","year":"2022","unstructured":"Shehbaz Jaffer, Kaveh Mahdaviani, and Bianca Schroeder. Improving the reliability of next generation ssds using wom-v codes. In 20th USENIX Conference on File and Storage Technologies (FAST), pages 117--132, 2022."},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42615.2023.10067616"},{"key":"e_1_3_2_1_16_1","first-page":"424","volume-title":"Bit Density. In IEEE International Solid-State Circuits Conference (ISSCC)","author":"Khakifirooz Ali","year":"2021","unstructured":"Ali Khakifirooz, Sriram Balasubrahmanyam, Richard Fastow, Kristopher H. Gaewsky, Chang Wan Ha, Rezaul Haque, Owen W. Jungroth, Steven Law, Aliasgar S. Madraswala, Binh Ngo, V Naveen Prabhu, Shantanu Rajwade, Karthikeyan Ramamurthi, Rohit S. Shenoy, Jacqueline Snyder, Cindy Sun, Deepak Thimmegowda, Bharat M. Pathak, and Pranav Kalavade. A 1Tb 4b\/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB\/s Program Throughput and 13.8 Gb\/mm 2 Bit Density. In IEEE International Solid-State Circuits Conference (ISSCC), pages 424--426, 2021."},{"key":"e_1_3_2_1_17_1","doi-asserted-by":"publisher","DOI":"10.5555\/3323298.3323325"},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42615.2023.10067666"},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42614.2022.9731640"},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1587\/elex.15.20180921"},{"key":"e_1_3_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2022.114509"},{"key":"e_1_3_2_1_22_1","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2019.2959318"},{"key":"e_1_3_2_1_23_1","doi-asserted-by":"publisher","DOI":"10.1109\/MICRO50266.2020.00048"},{"key":"e_1_3_2_1_24_1","doi-asserted-by":"publisher","DOI":"10.5555\/3357062.3357090"},{"key":"e_1_3_2_1_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCE.2022.3213585"},{"key":"e_1_3_2_1_26_1","doi-asserted-by":"publisher","DOI":"10.1145\/3445814.3446733"},{"key":"e_1_3_2_1_27_1","volume-title":"Characterization summary of performance, reliability, and threshold voltage distribution of 3d charge-trap nand flash memory. ACM Transactions on Storage (TOS), 18(2):1--25","author":"Liu Weihua","year":"2022","unstructured":"Weihua Liu, Fei Wu, Xiang Chen, Meng Zhang, Yu Wang, Xiangfeng Lu, and Changsheng Xie. Characterization summary of performance, reliability, and threshold voltage distribution of 3d charge-trap nand flash memory. ACM Transactions on Storage (TOS), 18(2):1--25, 2022."},{"key":"e_1_3_2_1_28_1","doi-asserted-by":"publisher","DOI":"10.23919\/ICACT56868.2023.10079381"},{"key":"e_1_3_2_1_29_1","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2018.00050"},{"key":"e_1_3_2_1_30_1","doi-asserted-by":"publisher","DOI":"10.1145\/3224432"},{"key":"e_1_3_2_1_31_1","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA56546.2023.10070946"},{"key":"e_1_3_2_1_32_1","volume-title":"Telomere: Real-time nand flash storage. ACM Transactions on Embedded Computing Systems (TECS), 21(1):1--24","author":"Missimer Katherine","year":"2022","unstructured":"Katherine Missimer, Manos Athanassoulis, and Richard West. Telomere: Real-time nand flash storage. ACM Transactions on Embedded Computing Systems (TECS), 21(1):1--24, 2022."},{"key":"e_1_3_2_1_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939077"},{"key":"e_1_3_2_1_34_1","doi-asserted-by":"publisher","DOI":"10.1145\/1519065.1519081"},{"key":"e_1_3_2_1_35_1","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS47818.2019.8986221"},{"key":"e_1_3_2_1_36_1","doi-asserted-by":"publisher","DOI":"10.1145\/2591513.2591594"},{"key":"e_1_3_2_1_37_1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129620"},{"key":"e_1_3_2_1_38_1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720454"},{"key":"e_1_3_2_1_39_1","doi-asserted-by":"publisher","DOI":"10.1145\/3445814.3446719"},{"key":"e_1_3_2_1_40_1","doi-asserted-by":"publisher","DOI":"10.1109\/GLOCOM.2014.7037159"},{"key":"e_1_3_2_1_41_1","volume-title":"Technology, global value chains, and jobs: Continuing asean's role in transformed global value chains. ASEAN AND GLOBAL VALUE CHAINS, page 148","author":"Pasadilla Gloria","year":"2023","unstructured":"Gloria Pasadilla. Technology, global value chains, and jobs: Continuing asean's role in transformed global value chains. ASEAN AND GLOBAL VALUE CHAINS, page 148, 2023."},{"key":"e_1_3_2_1_42_1","doi-asserted-by":"publisher","DOI":"10.1109\/GLOCOM.2012.6503610"},{"key":"e_1_3_2_1_43_1","doi-asserted-by":"publisher","DOI":"10.1109\/LCOMM.2019.2936342"},{"key":"e_1_3_2_1_44_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCOMM.2013.053013.120733"},{"key":"e_1_3_2_1_45_1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2019.8662443"},{"key":"e_1_3_2_1_46_1","doi-asserted-by":"publisher","DOI":"10.1145\/3352460.3358311"},{"key":"e_1_3_2_1_47_1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2016.2535224"},{"key":"e_1_3_2_1_48_1","article-title":"Experimental verification and analysis of the acceleration factor model for 3-d nand flash memory","author":"Wei Debao","year":"2021","unstructured":"Debao Wei, Hua Feng, Liyan Qiao, Cong Hu, and Xiyuan Peng. Experimental verification and analysis of the acceleration factor model for 3-d nand flash memory. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2021.","journal-title":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"},{"key":"e_1_3_2_1_49_1","volume-title":"Ssd-based workload characteristics and their performance implications. ACM Transactions on Storage (TOS), 17(1):1--26","author":"Yadgar Gala","year":"2021","unstructured":"Gala Yadgar, MOSHE Gabel, Shehbaz Jaffer, and Bianca Schroeder. Ssd-based workload characteristics and their performance implications. ACM Transactions on Storage (TOS), 17(1):1--26, 2021."},{"key":"e_1_3_2_1_50_1","first-page":"1","volume-title":"Proceedings of the Design, Automation and Test in Europe Conference (DATE)","author":"Ye Min","year":"2020","unstructured":"Min Ye, Qiao Li, Jianqiang Nie, Tei-Wei Kuo, and Chun Jason Xue. Valid window: A new metric to measure the reliability of nand flash memory. In Proceedings of the Design, Automation and Test in Europe Conference (DATE), pages 1--6, 2020."},{"key":"e_1_3_2_1_51_1","unstructured":"YEESTOR. Ys9083xt\/ys9081xt ssd platform 2018. http:\/\/www.yeestor.com\/index-product-info-id-946-cid-33-pid-3-infopid-33.html."},{"key":"e_1_3_2_1_52_1","first-page":"243","volume-title":"11th USENIX Conference on File and Storage Technologies (FAST)","author":"Zhao Kai","year":"2013","unstructured":"Kai Zhao, Wenzhe Zhao, Hongbin Sun, Xiaodong Zhang, Nanning Zheng, and Tong Zhang. Ldpc-in-ssd: Making advanced error correction codes work effectively in solid state drives. In 11th USENIX Conference on File and Storage Technologies (FAST), pages 243--256, 2013."}],"event":{"name":"ASPLOS '24: 29th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 2","location":"La Jolla CA USA","acronym":"ASPLOS '24","sponsor":["SIGARCH ACM Special Interest Group on Computer Architecture","SIGOPS ACM Special Interest Group on Operating Systems","SIGPLAN ACM Special Interest Group on Programming Languages","SIGBED ACM Special Interest Group on Embedded Systems"]},"container-title":["Proceedings of the 29th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 2"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3620665.3640372","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/3620665.3640372","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T00:03:41Z","timestamp":1750291421000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/3620665.3640372"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,27]]},"references-count":52,"alternative-id":["10.1145\/3620665.3640372","10.1145\/3620665"],"URL":"https:\/\/doi.org\/10.1145\/3620665.3640372","relation":{},"subject":[],"published":{"date-parts":[[2024,4,27]]},"assertion":[{"value":"2024-04-27","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}