{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T12:40:19Z","timestamp":1768740019067,"version":"3.49.0"},"reference-count":34,"publisher":"The Electrochemical Society","issue":"3","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J. Electrochem. Soc."],"published-print":{"date-parts":[[2009]]},"DOI":"10.1149\/1.3049819","type":"journal-article","created":{"date-parts":[[2009,1,31]],"date-time":"2009-01-31T05:49:20Z","timestamp":1233380960000},"page":"H161","source":"Crossref","is-referenced-by-count":234,"title":["Toward High-Performance Amorphous GIZO TFTs"],"prefix":"10.1149","volume":"156","author":[{"given":"P.","family":"Barquinha","sequence":"first","affiliation":[]},{"given":"L.","family":"Pereira","sequence":"additional","affiliation":[]},{"given":"G.","family":"Gonc\u0327alves","sequence":"additional","affiliation":[]},{"given":"R.","family":"Martins","sequence":"additional","affiliation":[]},{"given":"E.","family":"Fortunato","sequence":"additional","affiliation":[]}],"member":"77","reference":[{"key":"10.1149\/1.3049819_r1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1085276"},{"key":"10.1149\/1.3049819_r2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1843286"},{"key":"10.1149\/1.3049819_r3","doi-asserted-by":"publisher","DOI":"10.1063\/1.1862767"},{"key":"10.1149\/1.3049819_r4","doi-asserted-by":"publisher","DOI":"10.1116\/1.2366569"},{"key":"10.1149\/1.3049819_r5","doi-asserted-by":"publisher","DOI":"10.1149\/1.2903866"},{"key":"10.1149\/1.3049819_r6","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2006.01.067"},{"key":"10.1149\/1.3049819_r7","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2006.01.073"},{"key":"10.1149\/1.3049819_r8","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200400368"},{"key":"10.1149\/1.3049819_r9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1534627"},{"key":"10.1149\/1.3049819_r10","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.L347"},{"key":"10.1149\/1.3049819_r11","doi-asserted-by":"publisher","DOI":"10.1063\/1.1553997"},{"key":"10.1149\/1.3049819_r12","doi-asserted-by":"publisher","DOI":"10.1063\/1.1633676"},{"key":"10.1149\/1.3049819_r13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1542677"},{"key":"10.1149\/1.3049819_r14","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/37\/20\/006"},{"key":"10.1149\/1.3049819_r15","doi-asserted-by":"publisher","DOI":"10.1038\/nature03090"},{"key":"10.1149\/1.3049819_r16","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.03.158"},{"key":"10.1149\/1.3049819_r17","doi-asserted-by":"publisher","DOI":"10.1063\/1.1765864"},{"key":"10.1149\/1.3049819_r18","doi-asserted-by":"publisher","DOI":"10.1063\/1.2495754"},{"key":"10.1149\/1.3049819_r19","doi-asserted-by":"publisher","DOI":"10.1063\/1.2749177"},{"key":"10.1149\/1.3049819_r20","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2006.03.004"},{"key":"10.1149\/1.3049819_r21","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2007.10.071"},{"key":"10.1149\/1.3049819_r22","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.03.176"},{"key":"10.1149\/1.3049819_r23","doi-asserted-by":"publisher","DOI":"10.1149\/1.2945869"},{"key":"10.1149\/1.3049819_r24","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.115215"},{"key":"10.1149\/1.3049819_r25","doi-asserted-by":"publisher","DOI":"10.1063\/1.1712015"},{"key":"10.1149\/1.3049819_r26","unstructured":"J. F. Wager, D. A. Keszler, and R. E. Presley , inTransparent Electronics, p. 83, Springer, New York (2008)."},{"key":"10.1149\/1.3049819_r27","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/40\/5\/004"},{"key":"10.1149\/1.3049819_r28","doi-asserted-by":"publisher","DOI":"10.1149\/1.2903209"},{"key":"10.1149\/1.3049819_r29","unstructured":"V. Assuncao, E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins , inInfluence of the Deposition Pressure on the Properties of Transparent and Conductive ZnO:Ga Thin-Film Produced by r.f. Sputtering at Room Temperature, p. 401, Elsevier Science Sa, Strasbourg, France (2002)."},{"key":"10.1149\/1.3049819_r30","unstructured":"J. Yoo, J. Lee, S. Kim, K. Yoon, I. J. Park, S. K. Dhungel, B. Karunagaran, D. Mangalaraj, and J. S. Yi , inHigh Transmittance and Low Resistive ZnO:Al Films for Thin Film Solar Cells, p. 213, Elsevier Science Sa, Strasbourg, France (2004)."},{"key":"10.1149\/1.3049819_r31","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2007.03.161"},{"key":"10.1149\/1.3049819_r32","doi-asserted-by":"publisher","DOI":"10.1126\/science.1083212"},{"key":"10.1149\/1.3049819_r33","unstructured":"A. C. Tickle , inThin-Film Transistors-A New Approach to Microelectronics, p. 14, Wiley, Hoboken, NJ (1969)."},{"key":"10.1149\/1.3049819_r34","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.4935"}],"container-title":["Journal of The Electrochemical Society"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/syndication.highwire.org\/content\/doi\/10.1149\/1.3049819","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,1,13]],"date-time":"2020-01-13T13:43:50Z","timestamp":1578923030000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3049819"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009]]},"references-count":34,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2009]]}},"URL":"https:\/\/doi.org\/10.1149\/1.3049819","relation":{},"ISSN":["0013-4651"],"issn-type":[{"value":"0013-4651","type":"print"}],"subject":[],"published":{"date-parts":[[2009]]}}}