{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,19]],"date-time":"2025-09-19T09:34:18Z","timestamp":1758274458412,"version":"3.37.3"},"reference-count":0,"publisher":"The Electrochemical Society","issue":"3","license":[{"start":{"date-parts":[[2010,10,1]],"date-time":"2010-10-01T00:00:00Z","timestamp":1285891200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/page\/copyright"},{"start":{"date-parts":[[2010,10,1]],"date-time":"2010-10-01T00:00:00Z","timestamp":1285891200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/iopscience.iop.org\/info\/page\/text-and-data-mining"}],"content-domain":{"domain":["iopscience.iop.org"],"crossmark-restriction":false},"short-container-title":["ECS Trans."],"published-print":{"date-parts":[[2010,10,1]]},"abstract":"<jats:p>The effect of a thin metallic interlayer deposited on Si substrate prior the sputtering of HfO2 films was investigated. It was shown that the metallic interlayer acts as an oxygen barrier during the HfO2 deposition. After annealing, the metal diffuses in HfO2 films and prevents the formation of a low-k layer at the high-k\/Si interface. However, in order to fully investigate the improvement in the interfacial and electrical properties, the thickness of the metallic interlayer needs to adapted to the thickness of the HfO2.<\/jats:p>","DOI":"10.1149\/1.3481639","type":"journal-article","created":{"date-parts":[[2010,10,2]],"date-time":"2010-10-02T22:50:04Z","timestamp":1286059804000},"page":"497-506","update-policy":"https:\/\/doi.org\/10.1088\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Oxygen Diffusion Barrier Applied To High-k Thin Films Deposition"],"prefix":"10.1149","volume":"33","author":[{"given":"Erwan","family":"Rauwel","sequence":"first","affiliation":[]},{"given":"Protima","family":"Rauwel","sequence":"additional","affiliation":[]},{"given":"Fr\u00e9d\u00e9rique","family":"Ducroquet","sequence":"additional","affiliation":[]},{"given":"Igor","family":"Matko","sequence":"additional","affiliation":[]},{"given":"Armando","family":"Louren\u00e7o","sequence":"additional","affiliation":[]}],"member":"77","container-title":["ECS Transactions"],"original-title":[],"link":[{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"syndication"},{"URL":"https:\/\/syndication.highwire.org\/content\/doi\/10.1149\/1.3481639","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639","content-type":"text\/html","content-version":"vor","intended-application":"similarity-checking"},{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639\/pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,30]],"date-time":"2022-01-30T00:41:22Z","timestamp":1643503282000},"score":1,"resource":{"primary":{"URL":"https:\/\/iopscience.iop.org\/article\/10.1149\/1.3481639"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,10,1]]},"references-count":0,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2010,10,1]]}},"URL":"https:\/\/doi.org\/10.1149\/1.3481639","relation":{},"ISSN":["1938-5862","1938-6737"],"issn-type":[{"type":"print","value":"1938-5862"},{"type":"electronic","value":"1938-6737"}],"subject":[],"published":{"date-parts":[[2010,10,1]]},"assertion":[{"value":"Oxygen Diffusion Barrier Applied To High-k Thin Films Deposition","name":"article_title","label":"Article Title"},{"value":"ECS Transactions","name":"journal_title","label":"Journal Title"},{"value":"paper","name":"article_type","label":"Article Type"},{"value":"\u00a9 2010 ECS - The Electrochemical Society","name":"copyright_information","label":"Copyright Information"},{"name":"date_received","label":"Date Received","group":{"name":"publication_dates","label":"Publication dates"}},{"name":"date_accepted","label":"Date Accepted","group":{"name":"publication_dates","label":"Publication dates"}},{"name":"date_epub","label":"Online publication date","group":{"name":"publication_dates","label":"Publication dates"}}]}}