{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T11:04:34Z","timestamp":1740135874039,"version":"3.37.3"},"reference-count":0,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":1826,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000028","name":"Semiconductor Research Corporation","doi-asserted-by":"publisher","award":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"],"award-info":[{"award-number":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"]}],"id":[{"id":"10.13039\/100000028","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"],"award-info":[{"award-number":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Joint Services Electronics Program","award":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"],"award-info":[{"award-number":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"]}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"],"award-info":[{"award-number":["90-DJl16A20","DAAL03-91-G-0123","N0001490-J-1270","ECS-9200560"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1995,1]]},"abstract":"<jats:p>According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor\ntransport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main\ncategories: the hydrodynamic (HD) model which basically follows Bl\u00f8tekjer\u2032s approach [1, 2], and the Energy\nTransport (ET) model which originates from Strattton\u2032s approximation [3, 4]. The formulation, discretization,\nparametrization and numerical properties of the HD and ET models are carefully examined and compared. The\nwell\u2010known spurious velocity spike of the HD model in simple <jats:italic>nin<\/jats:italic> structures can then be understood from its\nformulation and parametrization of the thermoelectric current components. Recent progress in treating negative\ndifferential resistances with the ET model and extending the model to thermoelectric simulation is summarized.\nFinally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in\nmost modern devices and demonstrates very good numerical properties. The new advances in applicability and\ncomputational efficiency of the ET model, as well as its easy implementation by modifying the conventional\ndrift\u2010diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor\ndevices<\/jats:p>","DOI":"10.1155\/1995\/12686","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:56:46Z","timestamp":1190120206000},"page":"211-224","source":"Crossref","is-referenced-by-count":3,"title":["Formulation of Macroscopic TransportModels for Numerical Simulationof Semiconductor Devices"],"prefix":"10.1155","volume":"3","author":[{"given":"Edwin C.","family":"Kan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhiping","family":"Yu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Robert W.","family":"Dutton","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Datong","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Umberto","family":"Ravaioli","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1995,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1995\/012686.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1995\/12686","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T01:23:48Z","timestamp":1723080228000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1995\/12686"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,1]]},"references-count":0,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1995,1]]}},"alternative-id":["10.1155\/1995\/12686"],"URL":"https:\/\/doi.org\/10.1155\/1995\/12686","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1995,1]]}}}