{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,31]],"date-time":"2025-10-31T16:49:12Z","timestamp":1761929352751,"version":"3.37.3"},"reference-count":0,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":1826,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000015","name":"U.S. Department of Energy","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000015","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"],"award-info":[{"award-number":["DE-ACOS-840R21400","DAAL03-89-C-0038","DAAL03-91-G-0123","DSM-9103997","DMS-91232088","ECS-9214488"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1995,1]]},"abstract":"<jats:p>In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for\nsemiconductor devices in two space dimensions. The method combines a standard mixed finite element method,\nused to obtain directly an approximation to the electric field, with the so\u2010called Runge\u2010Kutta Discontinuous\nGalerkin (RKDG) method, originally devised for numerically solving multi\u2010dimensional hyperbolic systems of\nconservation laws, which is applied here to the convective part of the equations. Numerical simulations showing\nthe performance of the new method are displayed, and the results compared with those obtained by using\nEssentially Nonoscillatory (ENO) finite difference schemes. From the perspective of device modeling, these\nmethods are robust, since they are capable of encompassing broad parameter ranges, including those for which\nshock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but\nwe have tested them much more generally with considerable success.<\/jats:p>","DOI":"10.1155\/1995\/47065","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:56:46Z","timestamp":1190120206000},"page":"145-158","source":"Crossref","is-referenced-by-count":45,"title":["Mixed\u2010RKDG Finite Element Methodsfor the 2\u2010D Hydrodynamic Modelfor Semiconductor Device Simulation"],"prefix":"10.1155","volume":"3","author":[{"given":"Zhangxin","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bernardo","family":"Cockburn","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Joseph W.","family":"Jerome","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chi-Wang","family":"Shu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1995,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1995\/047065.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1995\/47065","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T01:23:51Z","timestamp":1723080231000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1995\/47065"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,1]]},"references-count":0,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1995,1]]}},"alternative-id":["10.1155\/1995\/47065"],"URL":"https:\/\/doi.org\/10.1155\/1995\/47065","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1995,1]]}}}