{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,3]],"date-time":"2026-03-03T16:08:51Z","timestamp":1772554131172,"version":"3.50.1"},"reference-count":0,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":1826,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000006","name":"Office of Naval Research","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000006","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1995,1]]},"abstract":"<jats:p>Hydrodynamic or continuum descriptions of electron transport have long been used for modeling and simulating\nsemiconductor devices. In this paper, we use classical field theory ideas to discuss the physical foundations of such\ndescriptions as applied specifically to high\u2010field transport regimes. The classical field theory development of these\ntypes of models is of interest because it differs significantly from and may be viewed as complementary to\nconventional derivations based on the Boltzmann equation: After outlining the general field theoretic principles\nupon which our development of fluid\u2010based high\u2010field transport descriptions is based, we study several specific\nmodels both analytically and using numerical simulation. These models provide an overall framework for\nunderstanding and extending various theories which have appeared in the literature. Most importantly, they\nemphasize the importance of including memory or history effects and viscosity in describing high\u2010field transport.\nIn all of this our aim is a unified and synoptic view unencumbered with microscopic details. Obtaining quantitative\nagreement with specific experiments and\/or microscopic simulations is only of secondary importance. We share\nthe view that continuum approaches can provide succinct and computationally\u2010efficient models needed for current\nand future semiconductor device analysis and engineering. At the same time, we believe that these models need\nnot be phenomenological but can be given solid physical foundation in macroscopic principles.<\/jats:p>","DOI":"10.1155\/1995\/85107","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:56:46Z","timestamp":1190120206000},"page":"101-114","source":"Crossref","is-referenced-by-count":9,"title":["Hydrodynamic Models of SemiconductorElectron Transport at High Fields"],"prefix":"10.1155","volume":"3","author":[{"given":"M. G.","family":"Ancona","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1995,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1995\/085107.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1995\/85107","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T01:23:56Z","timestamp":1723080236000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1995\/85107"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,1]]},"references-count":0,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1995,1]]}},"alternative-id":["10.1155\/1995\/85107"],"URL":"https:\/\/doi.org\/10.1155\/1995\/85107","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"value":"1065-514X","type":"print"},{"value":"1563-5171","type":"electronic"}],"subject":[],"published":{"date-parts":[[1995,1]]}}}