{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,6]],"date-time":"2025-08-06T13:19:27Z","timestamp":1754486367927},"reference-count":0,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":1826,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1995,1]]},"abstract":"<jats:p>We discuss the basis of a set of quantum hydrodynamic equations and the use of this set of equations in the\ntwo\u2010dimensional simulation of quantum effects in deep submicron semiconductor devices. The equations are\nobtained from the Wigner function equation\u2010of\u2010motion. Explicit quantum correction is built into these equations\nby using the quantum mechanical expression of the moments of the Wigner function, and its physical implication\nis clearly explained. These equations are then applied to numerical simulation of various small semiconductor\ndevices, which demonstrate expected quantum effects, such as barrier penetration and repulsion. These effects\nmodify the electron density distribution and current density distribution, and consequently cause a change of the\ntotal current flow by 10\u201015 per cent for the simulated HEMT devices. Our work suggests that the inclusion of\nquantum effects into the simulation of deep submicron and ultra\u2010submicron semiconductor devices is necessary.<\/jats:p>","DOI":"10.1155\/1995\/93452","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:56:46Z","timestamp":1190120206000},"page":"159-177","source":"Crossref","is-referenced-by-count":4,"title":["2\u2010D Simulation of Quantum Effects in SmallSemiconductor Devices Using QuantumHydrodynamic Equations"],"prefix":"10.1155","volume":"3","author":[{"given":"Jing-Rong","family":"Zhou","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"David K.","family":"Ferry","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1995,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1995\/093452.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1995\/93452","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T01:23:50Z","timestamp":1723080230000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1995\/93452"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,1]]},"references-count":0,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1995,1]]}},"alternative-id":["10.1155\/1995\/93452"],"URL":"https:\/\/doi.org\/10.1155\/1995\/93452","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1995,1]]}}}