{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:40:02Z","timestamp":1723200002151},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>Photon recycling is examined as an explanation for the observed large carrier lifetimes in\nan InP\/InGaAs photodiode. This effect extends the effective carrier lifetime within a\ndevice by re\u2010absorbing a fraction of the photons generated through radiative band\u2010toband\nrecombination events. In order to predict the behavior of this carrier generation,\nphoton recycling has been added to our two\u2010dimensional macroscopic device simulator,\nSTEBS\u20102D. A ray\u2010tracing preprocessing step is used to map all of the possible\ntrajectories and absorption of various wavelengths of emitted light from each\noriginating node within the device. The macroscopic simulator uses these data to\ndetermine the spatial location of the re\u2010absorbed radiation within the geometry of the\ndevice. By incorporating the ray tracer results with the total quantity and spectral\ncontent of recombined carriers at each node within the simulation, the recycled\ngeneration rate can be obtained. A practical application of this model is presented where\nthe effects of photon recycling are used as a possible explanation of the discrepancy\nbetween the theoretically predicted and experimentally observed radiative recombination\nrate in a double heterostructure photodetector.<\/jats:p>","DOI":"10.1155\/1998\/16476","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"153-157","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Numerical Examination of Photon Recycling as anExplanation of Observed Carrier Lifetime in DirectBandgap Materials"],"prefix":"10.1155","volume":"8","author":[{"suffix":"Jr.","given":"Joseph W.","family":"Parks","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kevin F.","family":"Brennan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Arlynn W.","family":"Smith","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/016476.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/16476","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:02:44Z","timestamp":1723197764000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/16476"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/16476"],"URL":"https:\/\/doi.org\/10.1155\/1998\/16476","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}