{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:40:01Z","timestamp":1723200001625},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000006","name":"Office of Naval Research","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000006","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>As semiconductor technology continues to evolve, numerical modeling of semiconductor\ndevices becomes an indispensible tool for the prediction of device characteristics.\nThe simple drift\u2010diffusion model is still widely used, especially in the study of subthreshold\nbehavior in MOSFETs. The numerical solution of these two equations offers\ndifficulties in small devices and special methods are required for the case when dealing\nwith 3D problems that demand large CPU times. In this work we investigate the\nconvergence properties of the Bi\u2010CGSTAB method. We find that this method shows\nsuperior convergence properties when compared to more commonly used ILU and SIP\nmethods.<\/jats:p>","DOI":"10.1155\/1998\/21494","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"301-305","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Convergence Properties of the Bi\u2010CGSTAB Method for theSolution of the 3D Poisson and 3D Electron CurrentContinuity Equations for Scaled Si MOSFETs"],"prefix":"10.1155","volume":"8","author":[{"given":"D.","family":"Vasileska","sequence":"first","affiliation":[]},{"given":"W. J.","family":"Gross","sequence":"additional","affiliation":[]},{"given":"V.","family":"Kafedziski","sequence":"additional","affiliation":[]},{"given":"D. K.","family":"Ferry","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/021494.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/21494","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:02:13Z","timestamp":1723197733000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/21494"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/21494"],"URL":"https:\/\/doi.org\/10.1155\/1998\/21494","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}