{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:01Z","timestamp":1723205401373},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>A self\u2010consistent Boltzmann\u2010Poisson\u2010Schr\u00f6dinger Solver is used to study the transconductance\ndegradation in high electron mobility transistor (HEMT), which has extensively been\nreported by both experimental [1]\u2010[8] and computational [9]\u2010[ 13] researchers. As the gate\nvoltage of a HEMT device is increased, its transconductance increases until it reaches a peak\nvalue, beyond which, the transconductance is degraded rather sharply with further increase in\napplied gate bias. We previously reported a two\u2010subband self\u2010consistent Boltzmann\u2010Poisson\u2010\nSchr\u00f6dinger Solver for HEMT. [14] We further incorporated an additional self\u2010consistency\nby calculating field\u2010dependent, energy\u2010dependent intersubband and intrasubband\nscattering rates due to ionized impurities and polar optical phonons.[15] In this work, we have\nused our Boltzmann\u2010Poisson\u2010Schr\u00f6dinger Solver and studied the effects of the intersubband\nand intrasubband scatterings of electrons, on the transconductance of a single quantum well\nHEMT device. The results of our simulations exhibit the same pattern reported by others\n[1]\u2010[13]. We concluded that the degradation of transconductance of the device with applied\ngate bias is attributed to the increased intersubband and intrasubband scattering of electrons,\nand hence to the reduction of electrons velocity in the channel.<\/jats:p>","DOI":"10.1155\/1998\/27462","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"73-77","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["A Study of Transconductance Degradation in HEMT Using a Self\u2010consistent Boltzmann\u2010Poisson\u2010Schr\u00f6dinger Solver"],"prefix":"10.1155","volume":"6","author":[{"given":"R.","family":"Khoie","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/027462.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/27462","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:32:14Z","timestamp":1723203134000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/27462"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/27462"],"URL":"https:\/\/doi.org\/10.1155\/1998\/27462","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}