{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:40:02Z","timestamp":1723200002280},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>By adopting the solution method for the BTE based on the spherical\u2010harmonics\nexpansion (SHE) [1], and using the full\u2010band structure for both the electron and valence\nband of silicon [2], the temperature dependence of a number of scattering mechanisms\nhas been modeled and implemented into the code HARM performing the SHE solution.\nComparisons with the experimental mobility data show agreement over a wide range of\ntemperatures. The analysis points out a number of factors from which the difficulties\nencountered in earlier investigations seemingly originate, particularly in the case of hole\nmobility.<\/jats:p>","DOI":"10.1155\/1998\/41638","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"361-365","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Temperature Dependence of the Electron and HoleScattering Mechanisms in Silicon Analyzed through aFull\u2010Band, Spherical\u2010Harmonics Solution of the BTE"],"prefix":"10.1155","volume":"8","author":[{"given":"Susanna","family":"Reggiani","sequence":"first","affiliation":[]},{"given":"Maria Cristina","family":"Vecchi","sequence":"additional","affiliation":[]},{"given":"Massimo","family":"Rudan","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/041638.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/41638","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:01:59Z","timestamp":1723197719000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/41638"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/41638"],"URL":"https:\/\/doi.org\/10.1155\/1998\/41638","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}