{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,10]],"date-time":"2026-06-10T00:04:17Z","timestamp":1781049857778,"version":"3.54.1"},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>The importance of 2\u2010dimensional (2D) features of carriers in Si MOSFETs on the device\nperformance is re\u2010examined experimentally and theoretically from the viewpoint of low\u2010field\nmobility, velocity in high tangential fields and the inversion\u2010layer capacitance. It is\nconfirmed that low\u2010field mobility and inversion\u2010layer capacitance can be understood\nwell in terms of the 2D subbands and the 2D carrier transport. In order to obtain fully\u2010quantitative\nunderstanding of low\u2010field mobility, however, it is still necessary to more\naccurately determine the amount of the scattering parameters in the inversion layer. On\nthe other hand, saturation velocity is considered to be less influenced by the 2D\nquantization, while it is found experimentally that saturation velocity is slightly\ndependent on surface carrier concentration.<\/jats:p><jats:p>According to the knowledge of 2\u2010dimensional carrier transport in Si inversion layer,\nan effective way to have higher current drive is to increase the occupancy of the 2\u2010fold\nvalleys, which have lower conductivity mass, on a (100) surface. From this viewpoint,\ntwo device structures, strained Si MOSFETs and SOI MOSFETs with ultra\u2010thin SOI\nfilms, are introduced and the behavior of low\u2010field mobility is analyzed through the\ncalculations of the subband structures and phonon\u2010limited mobility.<\/jats:p>","DOI":"10.1155\/1998\/53272","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"1-11","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Two\u2010dimensional Carrier Transport in Si MOSFETs"],"prefix":"10.1155","volume":"8","author":[{"given":"Shin-Ichi","family":"Takagi","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/053272.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/53272","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:00:24Z","timestamp":1723197624000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/53272"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/53272"],"URL":"https:\/\/doi.org\/10.1155\/1998\/53272","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"value":"1065-514X","type":"print"},{"value":"1563-5171","type":"electronic"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}