{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:40:02Z","timestamp":1723200002630},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000183","name":"Army Research Office","doi-asserted-by":"publisher","award":["DAAH04-94-G-0324"],"award-info":[{"award-number":["DAAH04-94-G-0324"]}],"id":[{"id":"10.13039\/100000183","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>High field transport in phosphor materials is an essential element of thin film\nelectroluminescent device performance. Due to the high accelerating fields in these\nstructures (1\u20133 MV\/cm), a complete description of transport under high field\nconditions utilizing information on the full band structure of the material is critical\nto understand the light emission process due to impact excitation of luminescent\nimpurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based\non empirical pseudopotential calculations to study its effect on the high field energy\ndistribution of conduction band electrons.<\/jats:p>","DOI":"10.1155\/1998\/53546","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"401-405","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Monte Carlo Simulations of High Field Transportin Electroluminescent Devices"],"prefix":"10.1155","volume":"8","author":[{"given":"Manfred","family":"D\u00fcr","sequence":"first","affiliation":[]},{"given":"Stephen M.","family":"Goodnick","sequence":"additional","affiliation":[]},{"given":"Martin","family":"Reigrotzki","sequence":"additional","affiliation":[]},{"given":"Ronald","family":"Redmer","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/053546.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/53546","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:02:18Z","timestamp":1723197738000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/53546"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/53546"],"URL":"https:\/\/doi.org\/10.1155\/1998\/53546","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}