{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:02Z","timestamp":1723205402026},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>The nonequilibrium total dielectric function lends itself to a simple and general method for\ncalculating the inelastic collision term in the electron Boltzmann equation for scattering from\na coupled mode system. Useful applications include scattering from plasmon\u2010polar phonon\nhybrid modes in modulation doped semiconductor structures. This paper presents numerical\nmethods for including inelastic scattering at momentum\u2010dependent hybrid phonon frequencies\nin the low\u2010field Boltzmann equation for two\u2010dimensional electrons coupled to bulk phonons.\nResults for electron mobility in GaAs show that the influence of mode coupling and\ndynamical screening on electron scattering from polar optical phonons is stronger for two\ndimensional electrons than was previously found for the three dimensional case.<\/jats:p>","DOI":"10.1155\/1998\/70276","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"69-72","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Total Dielectric Function Approachto the Electron Boltzmann Equation for Scatteringfrom a Two\u2010Dimensional Coupled Mode System"],"prefix":"10.1155","volume":"6","author":[{"given":"B. A.","family":"Sanborn","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/070276.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/70276","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:33:32Z","timestamp":1723203212000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/70276"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/70276"],"URL":"https:\/\/doi.org\/10.1155\/1998\/70276","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}