{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:01Z","timestamp":1723205401494},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"name":"Bell Northern Research"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>In this paper, we analyze, based on a two\u2010dimensional drift\u2010diffusion simulation, how variations\nin the structural components of an InGaAs\/InP separate absorption, grading, charge, and\nmultiplication photodiode (SAGCM) alter its performance. The model is employed in conjunction\nwith experimental measurements to enhance the understanding of the device performance.\nCalibration of the model to the material system and growth technique is performed\nvia the analysis of a simpler, alternate structure. Excellent agreement between the calculated\nresults and experimental measurements of the breakdown voltage, dark current, mesa punchthrough\nvoltage, photoresponse, and gain are obtained.<\/jats:p>","DOI":"10.1155\/1998\/73839","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"79-82","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Macroscopic Device Simulation of InGaAs\/InP Based Avalanche Photodiodes"],"prefix":"10.1155","volume":"6","author":[{"given":"Joseph W.","family":"Parks","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kevin F.","family":"Brennan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Larry E.","family":"Tarof","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/073839.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/73839","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:32:42Z","timestamp":1723203162000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/73839"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/73839"],"URL":"https:\/\/doi.org\/10.1155\/1998\/73839","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}