{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:01Z","timestamp":1723205401809},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"name":"ARO"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>We perform a self\u2010consistent calculation of resonant tunneling diode (RTD) I\u2010V characteristics\nincluding optical phonon scattering. The self\u2010consistency is obtained by solving the\nSchr\u00f6dinger equation and Poisson\u2019s equation iteratively with the Thomas\u2010Fermi approximation\nused for the device contact regions. For evaluation of phonon\u2010assisted current density,\nthe optical phonon scattering in the quantum well is modeled using the optical model potential.\nElectron transverse momentum is also incorporated. The calculated current and electron\nwavefunction illustrate the optical model and effects of the phonon scattering on the current\ntransport. The I\u2010V characteristics we obtain from the model calculation are in good agreement\nwith experimental results. This work manifests the importance of including self\u2010consistency,\noptical phonon scattering, and electron transverse momentum in modeling realistic RTD\nstructures.<\/jats:p>","DOI":"10.1155\/1998\/78412","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"83-86","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Self\u2010Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics"],"prefix":"10.1155","volume":"6","author":[{"given":"J. P.","family":"Sun","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G. I.","family":"Haddad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/078412.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/78412","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:32:36Z","timestamp":1723203156000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/78412"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/78412"],"URL":"https:\/\/doi.org\/10.1155\/1998\/78412","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}