{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:03Z","timestamp":1723205403270},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>We introduce a new approach to hot electron effects in Si\u2010MOSFETs, based on a mixture of\nevolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm\nsearchs for electron distributions which fit a given goal, for example a measured substrate\ncurrent and in this way can calculate backwards electron distributions from\nmeasurement results. The search of the Evolutionary Algorithm is directed toward physically\ncorrect distributions by help of a Monte Carlo like mutation operator. Results for bulk\u2010Si\ndemonstrate the correctness of the physical model in the Monte Carlo like mutation operator\nand the backward calculation ability of the Evolutionary Algorithm. First results for Si\u2010MOSFETs\nare qualitatively comparable to results of a Full Band Monte Carlo simulation.<\/jats:p>","DOI":"10.1155\/1998\/81023","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"307-311","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["New Approach to Hot Electron Effects in Si\u2010MOSFETsBased on an Evolutionary Algorithm Using a Monte CarloLike Mutation Operator"],"prefix":"10.1155","volume":"6","author":[{"given":"J.","family":"Jakumeit","sequence":"first","affiliation":[]},{"given":"U.","family":"Ravaioli","sequence":"additional","affiliation":[]},{"given":"K.","family":"Hess","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/081023.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/81023","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:32:10Z","timestamp":1723203130000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/81023"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/81023"],"URL":"https:\/\/doi.org\/10.1155\/1998\/81023","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}