{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:40:01Z","timestamp":1723200001305},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>We perform self\u2010consistent electronic structure calculations in the framework of\ninhomogeneously and anisotropically scaled local density functional theory of a fully\n3D modeled Si\/SiO<jats:sub>2<\/jats:sub> quantum dot. Electrons are laterally confined in the semiconductor\/\noxide heterojunction by a metallic gate atop of the device. Total charge densities,\ntotal free energies, chemical potentials for different numbers of electrons in the dot, and\nthe differential capacitances for various dot sizes are calculated. We observe shell filling\neffects in the differential capacitance. The <jats:italic>magic<\/jats:italic>\u2010numbers are governed by the six valley\nbandstructure of silicon, which leads to four fold degenerated single particle levels in the\ndot.<\/jats:p>","DOI":"10.1155\/1998\/86580","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:58:07Z","timestamp":1190120287000},"page":"231-235","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Self\u2010Consistent Calculations of the Ground Stateand the Capacitance of a 3D Si\/SiO<sub>2<\/sub> Quantum Dot"],"prefix":"10.1155","volume":"8","author":[{"given":"A.","family":"Scholze","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Wettstein","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Schenk","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"W.","family":"Fichtner","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/086580.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/vlsi\/1998\/086580.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/86580","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T10:01:45Z","timestamp":1723197705000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/86580"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/86580"],"URL":"https:\/\/doi.org\/10.1155\/1998\/86580","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}