{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T12:10:02Z","timestamp":1723205402236},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":730,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[1998,1]]},"abstract":"<jats:p>The well known Brooks\u2010Herring (BH) formula for charged\u2010impurity (CI) scattering overestimates\nthe mobility of electrons in highly doped semiconductors. The BH approach relies on a\nstatic, single\u2010site description of the carrier\u2010impurity interactions neglecting many\u2010particle\neffects. We propose a physically based charged\u2010impurity scattering model including Fermi\u2010\nDirac statistics, dispersive screening, and two\u2010ion scattering. An approximation for the dielectric\nfunction is made to avoid numerical integrations. The resulting scattering rate formulas\nare analytical. Monte Carlo calculations were performed for majority electrons in bulk silicon\nat 300 K with impurity concentrations from 10<jats:sup>15<\/jats:sup> cm<jats:sup>\u20103<\/jats:sup> to 10<jats:sup>21<\/jats:sup> cm<jats:sup>\u20103<\/jats:sup>.<\/jats:p>","DOI":"10.1155\/1998\/87014","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:57:27Z","timestamp":1190120247000},"page":"209-212","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["An Improved Ionized Impurity Scattering Model forMonte Carlo Calculations"],"prefix":"10.1155","volume":"6","author":[{"given":"G.","family":"Kaiblinger-Grujin","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.","family":"Kosina","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[1998,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/1998\/087014.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/1998\/87014","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T11:32:09Z","timestamp":1723203129000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/1998\/87014"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1998,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[1998,1]]}},"alternative-id":["10.1155\/1998\/87014"],"URL":"https:\/\/doi.org\/10.1155\/1998\/87014","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[1998,1]]},"assertion":[{"value":"1998-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}