{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T14:10:02Z","timestamp":1723212602893},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2001,1]]},"abstract":"<jats:p>A careful calibration of a continuum process simulator is normally required to achieve a\ngood agreement between simulated results and experimental dopant profiles. However,\nthe validity of such a calibration procedure is often limited to a particular technology.\nBy taking into account a number of physics\u2010based models and experimental results\navailable in literature, the predicting capability of the process simulation has been\nconveniently improved. In particular, this paper shows how concentration\u2010depth\nprofiles from two different CMOS technologies have been successfully reproduced with\na unique set of fitting parameters.<\/jats:p>","DOI":"10.1155\/2001\/28105","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T13:00:57Z","timestamp":1190120457000},"page":"459-463","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Simulation of 0.35 \u03bcm\/0.25 \u03bcm CMOSTechnology Doping Profiles"],"prefix":"10.1155","volume":"13","author":[{"given":"M.","family":"Lorenzini","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Haspeslagh","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Van Houdt","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H. E.","family":"Maes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2001,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2001\/028105.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2001\/28105","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T13:34:25Z","timestamp":1723210465000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2001\/28105"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["10.1155\/2001\/28105"],"URL":"https:\/\/doi.org\/10.1155\/2001\/28105","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2001,1]]},"assertion":[{"value":"2001-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}