{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T14:10:15Z","timestamp":1723212615321},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000006","name":"Office of Naval Research","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000006","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2001,1]]},"abstract":"<jats:p>We discuss a full three\u2010dimensional model of an ultra\u2010small MOSFET, in which the\ntransport is treated by a coupled EMC and molecular dynamics (MD) procedure to\ntreat the Coulomb interaction in real space. The inclusion of the proper Coulomb\ninteraction affects both the energy and momentum relaxation processes, but also has a\ndramatic effect on the characteristic curves of the device. We find that the short\u2010range\n<jats:italic>e<\/jats:italic>\u2013<jats:italic>e<\/jats:italic> and <jats:italic>e<\/jats:italic>\u2013i terms, combined with discrete impurity effects, is also needed for accurate\nmeasurement of the device threshold voltage.<\/jats:p>","DOI":"10.1155\/2001\/78780","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T13:00:57Z","timestamp":1190120457000},"page":"75-78","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Ultra\u2010small MOSFETs: The Importance of the FullCoulomb Interaction on Device Characteristics"],"prefix":"10.1155","volume":"13","author":[{"given":"W. J.","family":"Gross","sequence":"first","affiliation":[]},{"given":"D.","family":"Vasileska","sequence":"additional","affiliation":[]},{"given":"D. K.","family":"Ferry","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2001,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2001\/078780.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2001\/78780","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T13:34:38Z","timestamp":1723210478000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2001\/78780"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["10.1155\/2001\/78780"],"URL":"https:\/\/doi.org\/10.1155\/2001\/78780","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2001,1]]},"assertion":[{"value":"2001-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}