{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T04:40:01Z","timestamp":1723092001957},"reference-count":0,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2001,1]]},"abstract":"<jats:p>Systematic investigations on defect\u2010free <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> in deep submicron CMOS with reverse\nbody bias were performed by SPICE simulation towards an attempt to improve\nresolution of <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> measurement. Effects of reverse body bias on off\u2010state leakage of\nscaled CMOS devices and <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> of typical CMOS circuit cells were investigated. It was\nfound that reverse body bias can effectively reduce defect\u2010free <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> of typical 0.18 \u03bcm\ntechnology devices and logic gates while the faulty current is not as much reduced. The\nreduction in defect\u2010free <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> was enhanced as the device temperature went up and\ndiminishes as the temperature went down. Further investigation showed that reverse\nbody bias also makes the defect\u2010free <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> less sensitive to the input state; therefore, a\nsingle <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> current threshold might still be used for <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> testing of 0.18 \u03bcm CMOS circuits. It was found that there might exist an optimal reverse body bias that minimized\nthe defect\u2010free <jats:italic>I<\/jats:italic><jats:sub>DDQ<\/jats:sub> current. The optimal reverse bias value decreases as the temperature\nwent down and might vary from circuit to circuit, process to process, and\ntechnology generation to generation.<\/jats:p>","DOI":"10.1155\/2001\/79703","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T12:59:02Z","timestamp":1190120342000},"page":"501-513","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Effect of Reverse Body Bias on Current Testing of 0.18 \u03bcm Gates"],"prefix":"10.1155","volume":"12","author":[{"given":"Xiaomei","family":"Liu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Prachi","family":"Sathe","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Samiha","family":"Mourad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2000,9,11]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2001\/079703.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/vlsi\/2001\/079703.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2001\/79703","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,8]],"date-time":"2024-08-08T04:23:21Z","timestamp":1723091001000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2001\/79703"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2000,9,11]]},"references-count":0,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["10.1155\/2001\/79703"],"URL":"https:\/\/doi.org\/10.1155\/2001\/79703","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2000,9,11]]},"assertion":[{"value":"1999-08-15","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2000-09-11","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}