{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T14:10:03Z","timestamp":1723212603136},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2001,1]]},"abstract":"<jats:p>An improved 3\u2010D Monte Carlo simulation model is developed to treat the discrete\nrandom dopant distribution in sub\u20100.1 \u03bcm MOSFET. The new atomistic model is based\non a scattering rate calculation and an algorithm that take into account many\u2010body effects\nand the local variations of screening length according to impurity distribution and bias\nconditions.<\/jats:p><jats:p>To validate this new approach low field electron drift mobility and diffusion\ncoefficient have been computed using simulation of 3D bars for 10<jats:sup>15<\/jats:sup>\u201310<jats:sup>18<\/jats:sup> cm<jats:sup>\u20133<\/jats:sup> range\nof average doping concentration. A good agreement is found between calculation and\nexperimental mobility data at 300 K.<\/jats:p>","DOI":"10.1155\/2001\/96951","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T13:00:57Z","timestamp":1190120457000},"page":"399-404","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["An lonised\u2010impurity Scattering Modelfor 3D Monte Carlo Device Simulation with DiscreteImpurity Distribution"],"prefix":"10.1155","volume":"13","author":[{"given":"S.","family":"Barraud","sequence":"first","affiliation":[]},{"given":"P.","family":"Dollfus","sequence":"additional","affiliation":[]},{"given":"S.","family":"Galdin","sequence":"additional","affiliation":[]},{"given":"R.","family":"Rengel","sequence":"additional","affiliation":[]},{"given":"M. J.","family":"Martin","sequence":"additional","affiliation":[]},{"given":"J. E.","family":"Vel\u00e1zquez","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2001,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2001\/096951.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2001\/96951","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T13:34:21Z","timestamp":1723210461000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2001\/96951"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["10.1155\/2001\/96951"],"URL":"https:\/\/doi.org\/10.1155\/2001\/96951","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2001,1]]},"assertion":[{"value":"2001-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}