{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,6]],"date-time":"2025-10-06T17:53:49Z","timestamp":1759773229348},"reference-count":0,"publisher":"Wiley","issue":"1-4","license":[{"start":{"date-parts":[[2000,1,1]],"date-time":"2000-01-01T00:00:00Z","timestamp":946684800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2001,1]]},"abstract":"<jats:p>We describe a theoretical methodology for screening potential gate dielectric materials.\nA recently proposed method for constructing realistic structural models of the Si\u2010dielectric\ninterface is used to generate the Si\u2010SiO<jats:sub>2<\/jats:sub>\u2010Si and Si\u2010SiON\u2010SiO<jats:sub>2<\/jats:sub>\u2010Si model metal\u2010oxide\u2010semiconductor (MOS) structures. We discuss methods to estimate the valence\nband discontinuity at the corresponding interface. We use Landauer\u2032s ballistic transport\napproach to investigate the low bias leakage through these ultrathin dielectric layers.<\/jats:p>","DOI":"10.1155\/2001\/98032","type":"journal-article","created":{"date-parts":[[2007,9,18]],"date-time":"2007-09-18T13:00:57Z","timestamp":1190120457000},"page":"135-143","update-policy":"http:\/\/dx.doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Theoretical Investigation of UltrathinGate Dielectrics"],"prefix":"10.1155","volume":"13","author":[{"given":"Alexander A.","family":"Demkov","sequence":"first","affiliation":[]},{"given":"Xiaodong","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Heather","family":"Loechelt","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2001,1]]},"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2001\/098032.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1155\/2001\/98032","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,9]],"date-time":"2024-08-09T13:33:30Z","timestamp":1723210410000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1155\/2001\/98032"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":0,"journal-issue":{"issue":"1-4","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["10.1155\/2001\/98032"],"URL":"https:\/\/doi.org\/10.1155\/2001\/98032","archive":["Portico"],"relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2001,1]]},"assertion":[{"value":"2001-01-01","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}