{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T11:39:10Z","timestamp":1772969950818,"version":"3.50.1"},"reference-count":67,"publisher":"Wiley","issue":"1","license":[{"start":{"date-parts":[[2009,7,15]],"date-time":"2009-07-15T00:00:00Z","timestamp":1247616000000},"content-version":"vor","delay-in-days":195,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Journal of Sensors"],"published-print":{"date-parts":[[2009,1]]},"abstract":"<jats:p>The present paper compares three different kinds of semiconductor gas sensing\nmaterials: metal oxides (MOX), hydrogen\u2010terminated diamond (HD), and hydrogenated\namorphous silicon (a\u2010Si:H). Whereas in MOX materials oxygen is the chemically reactive\nsurface species, HD and a\u2010Si:H are covalently bonded semiconductors with hydrogenterminated\nsurfaces. We demonstrate that these dissimilar semiconductor materials exhibit\nthe same kind of low\u2010temperature gas response. This low\u2010temperature response\u2010mechanism\nis mediated by a thin layer of adsorbed water with the semiconductor materials themselves\nacting as pH sensors. In this adsorbate\u2010limited state the gas sensitivity is limited to\nmolecular species that can easily dissolve in H<jats:sub>2<\/jats:sub>O and subsequently undergo electrolytic\ndissociation. At higher temperatures, where a closed layer of adsorbed water can no longer\nexist, the gas response is limited by direct molecule\u2010semiconductor interactions. In this\nlatter mode of operation, MOX gas sensors respond to adsorbed gases according to their\ndifferent oxidising or reducing properties. Hydrogenated amorphous silicon (a\u2010Si:H), on the\nother hand, exhibits a significantly different cross sensitivity profile, revealing that gas\u2010surface\ninteractions may largely be restricted to analyte molecules with lone\u2010pair and\nelectron\u2010deficient three\u2010centre orbitals.<\/jats:p>","DOI":"10.1155\/2009\/620720","type":"journal-article","created":{"date-parts":[[2009,7,15]],"date-time":"2009-07-15T14:59:48Z","timestamp":1247669988000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":70,"title":["On the Low\u2010Temperature Response of Semiconductor Gas Sensors"],"prefix":"10.1155","volume":"2009","author":[{"given":"A.","family":"Helwig","sequence":"first","affiliation":[]},{"given":"G.","family":"M\u00fcller","sequence":"additional","affiliation":[]},{"given":"G.","family":"Sberveglieri","sequence":"additional","affiliation":[]},{"given":"M.","family":"Eickhoff","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2009,7,15]]},"reference":[{"key":"e_1_2_8_1_2","doi-asserted-by":"publisher","DOI":"10.1016\/0925-4005(94)01546-T"},{"key":"e_1_2_8_2_2","first-page":"71","volume-title":"Solid State Gas Sensors","author":"Williams D. 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