{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T12:45:24Z","timestamp":1760100324231},"reference-count":7,"publisher":"Hindawi Limited","license":[{"start":{"date-parts":[[2010,1,1]],"date-time":"2010-01-01T00:00:00Z","timestamp":1262304000000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"name":"Italian University and Reserch Ministry","award":["DM25810"],"award-info":[{"award-number":["DM25810"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Journal of Sensors"],"published-print":{"date-parts":[[2010]]},"abstract":"Shunt capacitive RF MEMS switches have been developed using III-V technology and employing (tantalum pentoxide) Ta2<\/jats:sub>O5<\/jats:sub>thin films as dielectric layers. In order to evaluate the potential of the Ta2<\/jats:sub>O5<\/jats:sub>thin films for the considered application, the compositional, structural, and electrical characterization of the deposited films has been performed, demonstrating that they are good candidates to be used as dielectric layers for the fabrication of RF MEMS switches. Specifically, Ta2<\/jats:sub>O5<\/jats:sub>films are found to show a leakage current density of few nA\/cm2<\/jats:sup>forE<\/mml:mi>\u223c<\/mml:mo>1<\/mml:mn><\/mml:mrow><\/mml:math>\u2009MV\/cm and a high dielectric constant of 32. Moreover, the charging process has been investigated, finding that it follows a stretched exponential law. The fabricated switches show actuation voltages in the range 15\u201320\u2009V, an insertion loss better than \u22120.8 dB up to 30\u2009GHz, and an isolation of ~\u221240\u2009dB at the resonant frequency which is around 25\u2009GHz.<\/jats:p>","DOI":"10.1155\/2010\/487061","type":"journal-article","created":{"date-parts":[[2010,12,29]],"date-time":"2010-12-29T06:42:12Z","timestamp":1293604932000},"page":"1-5","source":"Crossref","is-referenced-by-count":15,"title":["Ta2<\/sub>O5<\/sub>Thin Films for Capacitive RF MEMS Switches"],"prefix":"10.1155","volume":"2010","author":[{"given":"Anna","family":"Persano","sequence":"first","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research, Via Monteroni, 73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabio","family":"Quaranta","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research, Via Monteroni, 73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adriano","family":"Cola","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research, Via Monteroni, 73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Antonietta","family":"Taurino","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research, Via Monteroni, 73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Giorgio","family":"De Angelis","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Roma, National Council of Research, Via del Fosso del Cavaliere 100, 00133 Roma, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Romolo","family":"Marcelli","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Roma, National Council of Research, Via del Fosso del Cavaliere 100, 00133 Roma, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pietro","family":"Siciliano","sequence":"additional","affiliation":[{"name":"CNR-IMM, Institute for Microelectronics and Microsystems-Unit of Lecce, National Council of Research, Via Monteroni, 73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"98","reference":[{"key":"1","year":"2003"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2005.857336"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2009.07.006"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2033865"},{"issue":"9","key":"7","doi-asserted-by":"crossref","first-page":"4797","DOI":"10.1063\/1.367272","volume":"83","year":"1998","journal-title":"Journal of Applied Physics"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1063\/1.3407542"},{"issue":"3-4","key":"10","doi-asserted-by":"crossref","first-page":"333","DOI":"10.1017\/S1759078710000474","volume":"2","year":"2010","journal-title":"International Journal of Microwave and Wireless Technologies"}],"container-title":["Journal of Sensors"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2010\/487061.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2010\/487061.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2010\/487061.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T17:46:21Z","timestamp":1497894381000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.hindawi.com\/journals\/js\/2010\/487061\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010]]},"references-count":7,"alternative-id":["487061","487061"],"URL":"https:\/\/doi.org\/10.1155\/2010\/487061","relation":{},"ISSN":["1687-725X","1687-7268"],"issn-type":[{"value":"1687-725X","type":"print"},{"value":"1687-7268","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010]]}}}