{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T11:05:09Z","timestamp":1740135909735,"version":"3.37.3"},"reference-count":10,"publisher":"Wiley","license":[{"start":{"date-parts":[[2011,8,22]],"date-time":"2011-08-22T00:00:00Z","timestamp":1313971200000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["60306003","2009C21G2040066"],"award-info":[{"award-number":["60306003","2009C21G2040066"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology development plan of Zhejiang Province","award":["60306003","2009C21G2040066"],"award-info":[{"award-number":["60306003","2009C21G2040066"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["VLSI Design"],"published-print":{"date-parts":[[2011,8,22]]},"abstract":"<jats:p>Based on the previous achievements in improving latch-up immunity of SOI LIGBT, process simulation on our proposed VG RF SOI NLIGBT was carried out with TCAD to provide a virtually fabricated device structure. Then, an approximate latching current model was derived according to the condition of minimum regenerative feedback couple between the parasitic dual-transistors. The model indicates that its latching current is a few orders higher than those before. Further verification through device simulation was done with TCAD, which proved that its weak snapback voltage in the off state is about 0.5\u20132.75 times higher than those breakdown voltages reported before, its breakdown voltage in the off state is about 19\u2009V higher than its weak snapback voltage, and its latching current density in the on state is about 2-3 orders of magnitude higher than those reported before at room temperature due to hole current bypass through P<jats:sup>+<\/jats:sup> contact in P-well region. Therefore, it is characterized by significantly improved latch-up immunity.<\/jats:p>","DOI":"10.1155\/2011\/548546","type":"journal-article","created":{"date-parts":[[2011,8,22]],"date-time":"2011-08-22T19:00:32Z","timestamp":1314039632000},"page":"1-9","source":"Crossref","is-referenced-by-count":0,"title":["Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity"],"prefix":"10.1155","volume":"2011","author":[{"given":"Haipeng","family":"Zhang","sequence":"first","affiliation":[{"name":"Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China"},{"name":"College of Electronic Science and Technology, Faculty of Electronic Information and Electric Engineering, Dalian University of Technology, Dalian 116024, China"},{"name":"Hangzhou Hanan Semiconductor Co., Ltd., Hangzhou 310018, China"}]},{"given":"Ruisheng","family":"Qi","sequence":"additional","affiliation":[{"name":"Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China"}]},{"given":"Liang","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China"}]},{"given":"Buchun","family":"Su","sequence":"additional","affiliation":[{"name":"Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China"}]},{"given":"Dejun","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Electronic Science and Technology, Faculty of Electronic Information and Electric Engineering, Dalian University of Technology, Dalian 116024, China"}]}],"member":"311","reference":[{"issue":"3","key":"2","doi-asserted-by":"crossref","first-page":"63","DOI":"10.1109\/EDL.1983.25649","volume":"4","year":"1983","journal-title":"IEEE Electron Device Letters"},{"issue":"6","key":"3","doi-asserted-by":"crossref","first-page":"821","DOI":"10.1109\/T-ED.1984.21614","volume":"31","year":"1984","journal-title":"IEEE Transactions on Electron Devices"},{"issue":"12","key":"4","doi-asserted-by":"crossref","first-page":"519","DOI":"10.1049\/el:19840360","volume":"20","year":"1984","journal-title":"Electronics Letters"},{"issue":"12","key":"6","doi-asserted-by":"crossref","first-page":"1956","DOI":"10.1109\/T-ED.1986.22853","volume":"33","year":"1986","journal-title":"IEEE Transactions on Electron Devices"},{"issue":"9","key":"7","doi-asserted-by":"crossref","first-page":"450","DOI":"10.1109\/55.6942","volume":"9","year":"1988","journal-title":"IEEE Electron Device Letters"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/16.69911"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/16.370052"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(01)00291-X"},{"key":"25","doi-asserted-by":"publisher","DOI":"10.1109\/16.760414"},{"key":"26","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2004.04.005"}],"container-title":["VLSI Design"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/archive\/2011\/548546.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/archive\/2011\/548546.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/archive\/2011\/548546.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,12,9]],"date-time":"2020-12-09T05:29:32Z","timestamp":1607491772000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.hindawi.com\/journals\/vlsi\/2011\/548546\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,8,22]]},"references-count":10,"alternative-id":["548546","548546"],"URL":"https:\/\/doi.org\/10.1155\/2011\/548546","relation":{},"ISSN":["1065-514X","1563-5171"],"issn-type":[{"type":"print","value":"1065-514X"},{"type":"electronic","value":"1563-5171"}],"subject":[],"published":{"date-parts":[[2011,8,22]]}}}