{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T17:18:39Z","timestamp":1740158319361,"version":"3.37.3"},"reference-count":17,"publisher":"Wiley","license":[{"start":{"date-parts":[[2015,1,1]],"date-time":"2015-01-01T00:00:00Z","timestamp":1420070400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61574109","61204092"],"award-info":[{"award-number":["61574109","61204092"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61574109","61204092"],"award-info":[{"award-number":["61574109","61204092"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Journal of Electrical and Computer Engineering"],"published-print":{"date-parts":[[2015]]},"abstract":"<jats:p>We demonstrate the impact of semiconductor\/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap. Donor-like and acceptor-like ITs have different mechanism of the turn-on characteristics. The flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitor<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M1\"><mml:mrow><mml:msub><mml:mrow><mml:mi>C<\/mml:mi><\/mml:mrow><mml:mrow><mml:mtext>gd<\/mml:mtext><\/mml:mrow><\/mml:msub><\/mml:mrow><\/mml:math>for n-type TFETs with donor-like and acceptor-like ITs.<\/jats:p>","DOI":"10.1155\/2015\/630178","type":"journal-article","created":{"date-parts":[[2015,9,3]],"date-time":"2015-09-03T17:10:22Z","timestamp":1441300222000},"page":"1-14","source":"Crossref","is-referenced-by-count":4,"title":["Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors"],"prefix":"10.1155","volume":"2015","author":[{"given":"Zhi","family":"Jiang","sequence":"first","affiliation":[{"name":"School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}]},{"given":"Yiqi","family":"Zhuang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}]},{"given":"Cong","family":"Li","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}]},{"given":"Ping","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}]},{"given":"Yuqi","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}]}],"member":"311","reference":[{"key":"1","doi-asserted-by":"publisher","DOI":"10.1038\/nature10679"},{"issue":"1","key":"2","first-page":"83","volume":"31","year":"1961","journal-title":"Journal of Applied Physics"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2011.2181178"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2010.11.010"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.02.007"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1080\/00207217.2013.796544"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1063\/1.2748366"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.7567\/jjap.53.084201"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/35\/3\/034009"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/led.2013.2284290"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2312330"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/led.2010.2050456"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1147\/rd.504.0469"},{"year":"2012","key":"16"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2008.04.003"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(89)90151-5"},{"key":"20","doi-asserted-by":"publisher","DOI":"10.1109\/led.2010.2047240"}],"container-title":["Journal of Electrical and Computer Engineering"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/jece\/2015\/630178.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/jece\/2015\/630178.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/jece\/2015\/630178.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2016,8,18]],"date-time":"2016-08-18T18:50:38Z","timestamp":1471546238000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.hindawi.com\/journals\/jece\/2015\/630178\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015]]},"references-count":17,"alternative-id":["630178","630178"],"URL":"https:\/\/doi.org\/10.1155\/2015\/630178","relation":{},"ISSN":["2090-0147","2090-0155"],"issn-type":[{"type":"print","value":"2090-0147"},{"type":"electronic","value":"2090-0155"}],"subject":[],"published":{"date-parts":[[2015]]}}}