{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T14:35:33Z","timestamp":1740148533482,"version":"3.37.3"},"reference-count":16,"publisher":"Wiley","license":[{"start":{"date-parts":[[2016,1,1]],"date-time":"2016-01-01T00:00:00Z","timestamp":1451606400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000038","name":"Natural Sciences and Engineering Research Council of Canada","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100000038","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Journal of Sensors"],"published-print":{"date-parts":[[2016]]},"abstract":"<jats:p>The conflict between the two existing models was resolved, to provide a clear explanation for the unexpected \u201cselectivity\u201d found in UV light activated metal-oxide-semiconductor (MOS) gas sensors during the detection of reducing agents. A new model based on the dynamic equilibrium of adsorbed oxygen concentration was constructed by two types of responses: (<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M1\"><mml:mrow><mml:mn fontstyle=\"italic\">1<\/mml:mn><\/mml:mrow><\/mml:math>) when the MOS surface is adsorbed with oxygen, the conductance of the sensor increases upon injection of reducing agents (RA) (<jats:italic>\u03b1<\/jats:italic>-type) and (<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M2\"><mml:mrow><mml:mn fontstyle=\"italic\">2<\/mml:mn><\/mml:mrow><\/mml:math>) when the MOS surface is not covered by oxygen, the conductance decreases upon injection of RA (<jats:italic>\u03b2<\/jats:italic>-type). The proposed model was verified by the experiments of ZnO based MOS gas sensors, to reveal the origin of the unexpected \u201cselectivity\u201d found by the optimum intensity, where the current drop, due to the reaction between RA and MOS, which increases with UV power and levels with the reciprocal background current, which decreases with the UV power.<\/jats:p>","DOI":"10.1155\/2016\/4306154","type":"journal-article","created":{"date-parts":[[2016,2,25]],"date-time":"2016-02-25T16:01:43Z","timestamp":1456416103000},"page":"1-6","source":"Crossref","is-referenced-by-count":5,"title":["Unexpected Selectivity of UV Light Activated Metal-Oxide-Semiconductor Gas Sensors by Two Different Redox Processes"],"prefix":"10.1155","volume":"2016","author":[{"given":"Wenting","family":"Li","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering, McMaster University, Hamilton, ON, Canada L8S 4L7"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3936-3899","authenticated-orcid":true,"given":"Gu","family":"Xu","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, McMaster University, Hamilton, ON, Canada L8S 4L7"}]}],"member":"311","reference":[{"key":"1a","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2008.04.024"},{"issue":"3","key":"1b","first-page":"215","volume":"10","year":"2005","journal-title":"Reviews on Advanced Materials Science"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3601488"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2008.06.055"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1016\/0925-4005(93)00874-x"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1021\/jp4061895"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/jsen.2003.822216"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2003.09.017"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1016\/0925-4005(94)01395-0"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1039\/b915646a"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1021\/jp906043k"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2012.04.014"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2009.10.054"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2012.01.103"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(84)90376-6"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(94)90655-6"}],"container-title":["Journal of Sensors"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2016\/4306154.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2016\/4306154.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/js\/2016\/4306154.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2016,7,26]],"date-time":"2016-07-26T10:34:17Z","timestamp":1469529257000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.hindawi.com\/journals\/js\/2016\/4306154\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016]]},"references-count":16,"alternative-id":["4306154","4306154"],"URL":"https:\/\/doi.org\/10.1155\/2016\/4306154","relation":{},"ISSN":["1687-725X","1687-7268"],"issn-type":[{"type":"print","value":"1687-725X"},{"type":"electronic","value":"1687-7268"}],"subject":[],"published":{"date-parts":[[2016]]}}}