{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,30]],"date-time":"2026-03-30T11:03:09Z","timestamp":1774868589549,"version":"3.50.1"},"reference-count":27,"publisher":"Wiley","license":[{"start":{"date-parts":[[2017,1,1]],"date-time":"2017-01-01T00:00:00Z","timestamp":1483228800000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003141","name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003141","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Complexity"],"published-print":{"date-parts":[[2017]]},"abstract":"<jats:p>We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300\u00b0C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M1\"><mml:mrow><mml:msub><mml:mrow><mml:mi>V<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">F<\/mml:mi><mml:mi mathvariant=\"normal\">O<\/mml:mi><mml:mi mathvariant=\"normal\">R<\/mml:mi><mml:mi mathvariant=\"normal\">M<\/mml:mi><\/mml:mrow><\/mml:msub><\/mml:mrow><\/mml:math>,<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M2\"><mml:mrow><mml:msub><mml:mrow><mml:mi>V<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">S<\/mml:mi><mml:mi mathvariant=\"normal\">E<\/mml:mi><mml:mi mathvariant=\"normal\">T<\/mml:mi><\/mml:mrow><\/mml:msub><\/mml:mrow><\/mml:math>, and<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M3\"><mml:mrow><mml:msub><mml:mrow><mml:mi>V<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">R<\/mml:mi><mml:mi mathvariant=\"normal\">E<\/mml:mi><mml:mi mathvariant=\"normal\">S<\/mml:mi><mml:mi mathvariant=\"normal\">E<\/mml:mi><mml:mi mathvariant=\"normal\">T<\/mml:mi><\/mml:mrow><\/mml:msub><\/mml:mrow><\/mml:math>) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the<jats:italic>memristor<\/jats:italic>effect has been obtained after cyclic<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M4\"><mml:mi>I<\/mml:mi><mml:mtext>-<\/mml:mtext><mml:mi>V<\/mml:mi><\/mml:math>measurements. These resistive transitions in the metal oxide occur for both<jats:italic>bipolar<\/jats:italic>and<jats:italic>unipolar<\/jats:italic>conditions, while the<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M5\"><mml:msub><mml:mrow><mml:mi>I<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">O<\/mml:mi><mml:mi mathvariant=\"normal\">F<\/mml:mi><mml:mi mathvariant=\"normal\">F<\/mml:mi><\/mml:mrow><\/mml:msub><mml:mo>\/<\/mml:mo><mml:msub><mml:mrow><mml:mi>I<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">O<\/mml:mi><mml:mi mathvariant=\"normal\">N<\/mml:mi><\/mml:mrow><\/mml:msub><\/mml:math>ratio is around 4\u20136 orders of magnitude and is formed at gate voltages of<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M6\"><mml:mi>V<\/mml:mi><mml:mi mathvariant=\"normal\">g<\/mml:mi><mml:mo>&lt;<\/mml:mo><mml:mn fontstyle=\"italic\">4<\/mml:mn><\/mml:math>\u2009V. In unipolar mode, a gradual reduction in<mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\" id=\"M7\"><mml:mrow><mml:msub><mml:mrow><mml:mi>V<\/mml:mi><\/mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">S<\/mml:mi><mml:mi mathvariant=\"normal\">E<\/mml:mi><mml:mi mathvariant=\"normal\">T<\/mml:mi><\/mml:mrow><\/mml:msub><\/mml:mrow><\/mml:math>is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and\/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.<\/jats:p>","DOI":"10.1155\/2017\/8263904","type":"journal-article","created":{"date-parts":[[2017,9,20]],"date-time":"2017-09-20T21:01:36Z","timestamp":1505941296000},"page":"1-10","source":"Crossref","is-referenced-by-count":23,"title":["Understanding the Resistive Switching Phenomena of Stacked Al\/Al<sub>2<\/sub>O<sub>3<\/sub>\/Al Thin Films from the Dynamics of Conductive Filaments"],"prefix":"10.1155","volume":"2017","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5681-1713","authenticated-orcid":true,"given":"Joel","family":"Molina-Reyes","sequence":"first","affiliation":[{"name":"National Institute of Astrophysics, Optics and Electronics, Luis Enrique Erro No. 1, 72840 Tonantzintla, PUE, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Luis","family":"Hernandez-Martinez","sequence":"additional","affiliation":[{"name":"National Institute of Astrophysics, Optics and Electronics, Luis Enrique Erro No. 1, 72840 Tonantzintla, PUE, Mexico"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","reference":[{"key":"1","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3659296"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900375"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.77.035105"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.52.040001"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2015.12.037"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2017.07.031"},{"key":"9","volume":"93","year":"2008","journal-title":"Applied Physics Letters"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1063\/1.4948583"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1063\/1.3520666"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1039\/C6CP00450D"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1039\/C6CP00916F"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1063\/1.2974792"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4794519"},{"key":"17","volume":"1","year":"2015","journal-title":"Advances in Electronics"},{"key":"18","doi-asserted-by":"crossref","first-page":"1501","DOI":"10.1016\/j.mseb.2012.02.029","volume":"177","year":"2012","journal-title":"Materials Science and Engineering: B-Advanced"},{"key":"19","doi-asserted-by":"publisher","DOI":"10.1016\/j.jnoncrysol.2011.12.050"},{"key":"20","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.4.064010"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1063\/1.4963671"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.006"},{"key":"23","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2007.62"},{"key":"24","doi-asserted-by":"publisher","DOI":"10.1063\/1.4941697"},{"key":"26","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2016.07.112"},{"key":"27","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2013.2256171"},{"issue":"4","key":"29","doi-asserted-by":"crossref","first-page":"765","DOI":"10.1007\/s00339-011-6264-9","volume":"102","year":"2011","journal-title":"Applied Physics A"},{"key":"30","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201532993"},{"key":"31","doi-asserted-by":"publisher","DOI":"10.1063\/1.4991002"}],"container-title":["Complexity"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/downloads.hindawi.com\/journals\/complexity\/2017\/8263904.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/complexity\/2017\/8263904.xml","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/downloads.hindawi.com\/journals\/complexity\/2017\/8263904.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,3]],"date-time":"2022-08-03T03:31:09Z","timestamp":1659497469000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.hindawi.com\/journals\/complexity\/2017\/8263904\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"references-count":27,"alternative-id":["8263904","8263904"],"URL":"https:\/\/doi.org\/10.1155\/2017\/8263904","relation":{},"ISSN":["1076-2787","1099-0526"],"issn-type":[{"value":"1076-2787","type":"print"},{"value":"1099-0526","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017]]}}}