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Using this combination of measurements, one can estimate process\u2010induced variations in the device layout dimensions as well as deviations from nominal value in material properties, which can be used either for testing or device diagnostics purposes. Measurements performed on fabricated devices confirm that the 250\u2009nm overetch observed on SEM images can be correctly estimated using the proposed technique.<\/jats:p>","DOI":"10.1155\/2008\/283451","type":"journal-article","created":{"date-parts":[[2008,4,10]],"date-time":"2008-04-10T14:00:47Z","timestamp":1207836047000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["A Pull\u2010in Based Test Mechanism for Device Diagnostic and Process Characterization"],"prefix":"10.1155","volume":"2008","author":[{"given":"L. 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