{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,5]],"date-time":"2022-04-05T18:07:39Z","timestamp":1649182059325},"reference-count":0,"publisher":"American Scientific Publishers","issue":"6","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["j nanosci nanotechnol"],"published-print":{"date-parts":[[2021,6,1]]},"abstract":"<jats:p>In this work, to research the photoelectric responses to humidity using a semiconductor film, an ultraviolet (UV) light induced device has been investigated on SnO<jats:sub>2<\/jats:sub> film at room temperature. Screen printing method was used to prepare SnO<jats:sub>2<\/jats:sub> film on the Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>\n substrate. The crystalline structure and morphology of SnO<jats:sub>2<\/jats:sub> was characterized with XRD and FE-SEM. The UV light induced photoelectric responses of SnO<jats:sub>2<\/jats:sub> to a constant humidity (20% RH) were evaluated firstly under four different bias voltages. At 2 V bias voltage, the\n photocurrent amplitude reaches 4.58 <jats:italic>\u03bc<\/jats:italic>A, which is higher than that of 0.2 V bias (0.27 <jats:italic>\u03bc<\/jats:italic>A). Then the photoelectric responses to different relative humidity conditions (20% RH, 40% RH and 60% RH) were tested. The results display that the photocurrent decreased while the relative\n humidity increased. To illustrate the anomaly current of SnO<jats:sub>2<\/jats:sub> film at 60% RH, the darkcurrent to different relative humidity conditions (20% RH, 40% RH and 60% RH) were also tested. To make clear these results, corresponding probable illustration was proposed.<\/jats:p>","DOI":"10.1166\/jnn.2021.19320","type":"journal-article","created":{"date-parts":[[2021,11,5]],"date-time":"2021-11-05T23:06:18Z","timestamp":1636153578000},"page":"3269-3273","source":"Crossref","is-referenced-by-count":0,"title":["Research on Photoelectric Responses of SnO<sub>2<\/sub> Film to Humidity Under UV Light Irradiation"],"prefix":"10.1166","volume":"21","author":[{"given":"Jiayou","family":"Tao","sequence":"first","affiliation":[{"name":"School of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Longtao","family":"Tang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Hunan Province on Information Photonics and Free-Space Optical Communications, School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang, 414006, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhijun","family":"Zou","sequence":"additional","affiliation":[{"name":"Key Laboratory of Hunan Province on Information Photonics and Free-Space Optical Communications, School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang, 414006, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gaohua","family":"Liao","sequence":"additional","affiliation":[{"name":"Key Laboratory of Hunan Province on Information Photonics and Free-Space Optical Communications, School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang, 414006, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chang","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Hunan Province on Information Photonics and Free-Space Optical Communications, School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang, 414006, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jifei","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Hunan Province on Information Photonics and Free-Space Optical Communications, School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang, 414006, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiang","family":"Qi","sequence":"additional","affiliation":[{"name":"School of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"17","container-title":["Journal of Nanoscience and Nanotechnology"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.ingentaconnect.com\/content\/asp\/jnn\/2021\/00000021\/00000006\/art00012","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,5]],"date-time":"2021-11-05T23:06:29Z","timestamp":1636153589000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.ingentaconnect.com\/content\/10.1166\/jnn.2021.19320"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,6,1]]},"references-count":0,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2021,6,1]]}},"alternative-id":["1533-4880(20210601)21:6L.3269;1-"],"URL":"https:\/\/doi.org\/10.1166\/jnn.2021.19320","relation":{},"ISSN":["1533-4880"],"issn-type":[{"value":"1533-4880","type":"print"}],"subject":[],"published":{"date-parts":[[2021,6,1]]}}}