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While as prepared Zr(Y)O<jats:sub>2\u2013 \u03b4<\/jats:sub> films without copper additive were already crystallised and single phase, fresh Cu containing Zr(Y)O<jats:sub>2\u2013 \u03b4<\/jats:sub> are essentially amorphous, requiring high temperature treatment in air for crystallisation. Deposition rate of 0\u00b750\u20130\u00b775 \u03bcm h<jats:sup>\u20131<\/jats:sup> at sputtering power of 300 W was achieved. Surface morphology studies using atomic force microscope revealed typical film structures with small (&lt;50 nm) grains. The hardness of films decreases from 15\u00b78 to 8\u00b74 GPa with increasing copper content. Polarisation studies of electrochemical cell with cermet anodes, applied over protective films, suggested that electrochemical reaction is essentially governed by oxygen anion transfer from zirconia phase and\/or hydrogen oxidation in vicinity of zirconia film surface. Copper incorporation into Zr(Y)O<jats:sub>2\u2013 \u03b4<\/jats:sub> film leads to higher anode resistivity. <\/jats:p>","DOI":"10.1179\/174329409x455430","type":"journal-article","created":{"date-parts":[[2009,6,16]],"date-time":"2009-06-16T06:49:47Z","timestamp":1245134987000},"page":"584-589","source":"Crossref","is-referenced-by-count":4,"title":["Sputtered YSZ based protective thin films for SOFCs"],"prefix":"10.1177","volume":"26","author":[{"given":"A. L.","family":"Shaula","sequence":"first","affiliation":[{"name":"Department of Mechanical EngineeringSEG-CEMUC, University of Coimbra, 3030-788 Coimbra, Portugal;, Email: ashaula@cv.ua.pt"}]},{"given":"J. C.","family":"Oliveira","sequence":"additional","affiliation":[{"name":"Department of Mechanical EngineeringSEG-CEMUC, University of Coimbra, 3030-788 Coimbra, Portugal"}]},{"given":"V. 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