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The 2D monolayers Sn<jats:sub>x<\/jats:sub>P<jats:sub>y<\/jats:sub> with <jats:italic>x<\/jats:italic>\/<jats:italic>y<\/jats:italic> (1\/1, 1\/2, 1\/3, and so on) coordination number are studied based on the particle-swarm optimization technique combined with the density functional theory optimization. Its thermal stability can be confirmed by molecular dynamics at 70K and 300K, indicating that the novel 2D materials have a stable existence. The electronic band structures of four stable structures suggest that all the monolayers of Sn<jats:sub>x<\/jats:sub>P<jats:sub>y<\/jats:sub> are fully adjustable and flexible tunable band gaps semiconductors under the biaxial strain. The monolayer of P<jats:inline-formula><jats:alternatives><jats:tex-math>$$ \\overline{4}{2}_1 $$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n<mml:mover>\n<mml:mn>4<\/mml:mn>\n<mml:mo>\u00af<\/mml:mo>\n<\/mml:mover>\n<mml:msub>\n<mml:mn>2<\/mml:mn>\n<mml:mn>1<\/mml:mn>\n<\/mml:msub>\n<\/mml:math><\/jats:alternatives><\/jats:inline-formula>m-SnP<jats:sub>2<\/jats:sub> with unique valence band structure can go from nonmagnetic to ferromagnetic by the hole doping because of the \u201cStoner criterion,\u201d and Pmc2<jats:sub>1<\/jats:sub>-SnP<jats:sub>2<\/jats:sub> is a direct-like gap semiconductor with in-plane elastic anisotropy to possess a high electron mobility as high as 800\u2009cm<jats:sup>2<\/jats:sup>V<jats:sup>\u22121<\/jats:sup>\u2009s<jats:sup>\u22121<\/jats:sup> along the <jats:italic>k<\/jats:italic><jats:sub><jats:italic>b<\/jats:italic><\/jats:sub> direction, which is much higher than that of MoS<jats:sub>2<\/jats:sub> (\u223c 200\u2009cm<jats:sup>2<\/jats:sup>V<jats:sup>\u22121<\/jats:sup>\u2009s<jats:sup>\u22121<\/jats:sup>). The optical absorption peak of the material is in the ultraviolet region. These discoveries expand the potential applications of the emerging field of 2D Sn<jats:sub>x<\/jats:sub>P<jats:sub>y<\/jats:sub> structures in nanoelectronics.<\/jats:p>","DOI":"10.1186\/s11671-020-03383-0","type":"journal-article","created":{"date-parts":[[2020,7,29]],"date-time":"2020-07-29T12:02:39Z","timestamp":1596024159000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["SnxPy Monolayers: a New Type of Two-Dimensional Materials with High Stability, Carrier Mobility, and Magnetic Properties"],"prefix":"10.1186","volume":"15","author":[{"given":"Yan-Mei","family":"Dou","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chang-Wen","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ping","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pei-Ji","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2020,7,29]]},"reference":[{"key":"3383_CR1","doi-asserted-by":"crossref","first-page":"1102","DOI":"10.1021\/nn500064s","volume":"82","author":"D Jariwala","year":"2014","unstructured":"Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC (2014) Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. 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