{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,30]],"date-time":"2026-03-30T11:09:38Z","timestamp":1774868978770,"version":"3.50.1"},"reference-count":29,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2021,2,8]],"date-time":"2021-02-08T00:00:00Z","timestamp":1612742400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"},{"start":{"date-parts":[[2021,2,8]],"date-time":"2021-02-08T00:00:00Z","timestamp":1612742400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0"}],"funder":[{"DOI":"10.13039\/501100002261","name":"\u0420\u043e\u0441\u0441\u0438\u0439\u0441\u043a\u0438\u0439 \u0424\u043e\u043d\u0434 \u0424\u0443\u043d\u0434\u0430\u043c\u0435\u043d\u0442\u0430\u043b\u044c\u043d\u044b\u0445 \u0418\u0441\u0441\u043b\u0435\u0434\u043e\u0432\u0430\u043d\u0438\u0439","doi-asserted-by":"publisher","award":["18-02-00415"],"award-info":[{"award-number":["18-02-00415"]}],"id":[{"id":"10.13039\/501100002261","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nanoscale Res Lett"],"published-print":{"date-parts":[[2021,12]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The detailed studies of the surface structure of synthetic boron-doped diamond single crystals using both conventional X-ray and synchrotron nano- and microbeam diffraction, as well as atomic force microscopy and micro-Raman spectroscopy, were carried out to clarify the recently discovered features in them. The arbitrary shaped islands towering above the (111) diamond surface are formed at the final stage of the crystal growth. Their lateral dimensions are from several to tens of microns and their height is from 0.5 to 3\u00a0\u03bcm. The highly nonequilibrium conditions of crystal growth enhance the boron solubility and, therefore, lead to an increase of the boron concentrations in the islands on the surface up to 10<jats:sup>22<\/jats:sup>\u00a0cm<jats:sup>\u22123<\/jats:sup>, eventually generating significant stresses in them. The stress in the islands is found to be the volumetric tensile stress. This conclusion is based on the stepwise shift of the diamond Raman peak toward lower frequencies from 1328 to 1300\u00a0cm<jats:sup>\u22121<\/jats:sup> in various islands and on the observation of the shift of three low-intensity reflections at 2-theta Bragg angles of 41.468\u00b0, 41.940\u00b0 and 42.413\u00b0 in the X-ray diffractogram to the left relative to the (111) diamond reflection at 2theta\u2009=\u200943.93\u00b0. We believe that the origin of the stepwise tensile stress is a discrete change in the distances between boron\u2013carbon layers with the step of 6.18\u00a0\u212b. This supposition explains also the stepwise (step of 5\u00a0cm<jats:sup>\u22121<\/jats:sup>) behavior of the diamond Raman peak shift. Two approaches based on the combined application of Raman scattering and X-ray diffraction data allowed determination of the values of stresses both in lateral and normal directions. The maximum tensile stress in the direction normal to the surface reaches 63.6\u00a0GPa, close to the fracture limit of diamond, equal to 90\u00a0GPa along the [111] crystallographic direction. The presented experimental results unambiguously confirm our previously proposed structural model of the boron-doped diamond containing two-dimensional boron\u2013carbon nanosheets and bilayers.<\/jats:p>","DOI":"10.1186\/s11671-021-03484-4","type":"journal-article","created":{"date-parts":[[2021,2,8]],"date-time":"2021-02-08T22:49:27Z","timestamp":1612824567000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Structure Investigations of Islands with Atomic-Scale Boron\u2013Carbon Bilayers in Heavily Boron-Doped Diamond Single Crystal: Origin of Stepwise Tensile Stress"],"prefix":"10.1186","volume":"16","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2933-4349","authenticated-orcid":false,"given":"S. N.","family":"Polyakov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V. N.","family":"Denisov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V. V.","family":"Denisov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. I.","family":"Zholudev","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A. A.","family":"Lomov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V. A.","family":"Moskalenko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. P.","family":"Molchanov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. Yu.","family":"Martyushov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. A.","family":"Terentiev","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V. D.","family":"Blank","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2021,2,8]]},"reference":[{"key":"3484_CR1","doi-asserted-by":"publisher","first-page":"1600501","DOI":"10.1002\/aelm.201600501","volume":"4","author":"JY Tsao","year":"2018","unstructured":"Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle SG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, Graham S, Grotjohn TA, Heller ER, Higashiwaki M, Islam MS, Juodawlkis PW, Khan MA, Koehler AD, Leach JH, Mishra UK, Nemanich RJ, Pilawa-Podgurski RCN, Shealy JB, Sitar Z, Tadjer MJ, Witulski AF, Wraback M, Simmons JA (2018) Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv Electron Mater 4:1600501. https:\/\/doi.org\/10.1002\/aelm.201600501","journal-title":"Adv Electron Mater"},{"key":"3484_CR2","doi-asserted-by":"publisher","first-page":"800","DOI":"10.1016\/j.diamond.2006.12.010","volume":"16","author":"VD Blank","year":"2007","unstructured":"Blank VD, Kuznetsov MS, Nosukhin SA, Terentiev SA, Denisov VN (2007) The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond. Diamond Relat Mater 16:800. https:\/\/doi.org\/10.1016\/j.diamond.2006.12.010","journal-title":"Diamond Relat Mater"},{"key":"3484_CR3","doi-asserted-by":"publisher","first-page":"364224","DOI":"10.1088\/0953-8984\/21\/36\/364224","volume":"21","author":"RC Burns","year":"2009","unstructured":"Burns RC, Chumakov AI, Connell SH, Dube D, Godfried HP, Hansen JO, H\u00e4rtwig J, Hoszowska J, Masiello F, Mkhonza L, Rebak M, Rommevaux A, Setshedi R, Van Vaerenbergh P (2009) HPHT growth and x-ray characterization of high-quality type IIa diamond. J Phys Condens Matter 21:364224. https:\/\/doi.org\/10.1088\/0953-8984\/21\/36\/364224","journal-title":"J Phys Condens Matter"},{"key":"3484_CR4","doi-asserted-by":"publisher","first-page":"1157","DOI":"10.1016\/0925-9635(92)90089-7","volume":"1","author":"WF Banholzer","year":"1992","unstructured":"Banholzer WF, Anthony TR (1992) Isotope enrichment during diamond growth. Diamond Relat Mater 1:1157. https:\/\/doi.org\/10.1016\/0925-9635(92)90089-7","journal-title":"Diamond Relat Mater"},{"key":"3484_CR5","doi-asserted-by":"publisher","first-page":"11","DOI":"10.1186\/s11671-015-1215-6","volume":"11","author":"SN Polyakov","year":"2016","unstructured":"Polyakov SN, Denisov VN, Mavrin BN, Kirichenko AN, Kuznetsov MS, Martyushov SYu, Terentiev SA, Blank VD (2016) Formation of boron-carbon nanosheets and bilayers in boron-doped diamond: origin of metallicity and superconductivity. Nanoscale Res Lett 11:11. https:\/\/doi.org\/10.1186\/s11671-015-1215-6","journal-title":"Nanoscale Res Lett"},{"key":"3484_CR6","doi-asserted-by":"publisher","first-page":"115153","DOI":"10.1103\/PhysRevB.102.115153","volume":"102","author":"VD Blank","year":"2020","unstructured":"Blank VD, Boldyrev KN, Denisov VN, Denisov VV, Galkin AS, Kuznetsov MS, Mavrin BN, Nosukhin SA, Prikhodko DD, Sukhanov AA, Tarelkin SA, Terentiev SA (2020) Electronic band structure of phosphorus-doped single crystal diamond: dynamic Jahn\u2013Teller distortion of the tetrahedral donor ground state. Phys Rev B 102:115153. https:\/\/doi.org\/10.1103\/PhysRevB.102.115153","journal-title":"Phys Rev B"},{"key":"3484_CR7","doi-asserted-by":"publisher","DOI":"10.1016\/B978-0-08-102183-5.00002-9","volume-title":"Power electronics device applications of diamond semiconductors, Chapter 2, Doping and semiconductor characterization","author":"S Koizumi","year":"2018","unstructured":"Koizumi S, Umezava H, Pernot J, Suzuki M (2018) Power electronics device applications of diamond semiconductors, Chapter 2, Doping and semiconductor characterization. Woodhead Publishing, Elsevier LTD., Cambridge. https:\/\/doi.org\/10.1016\/B978-0-08-102183-5.00002-9"},{"key":"3484_CR8","doi-asserted-by":"publisher","first-page":"161202(R)","DOI":"10.1103\/PhysRevB.66.161202","volume":"66","author":"LG Wang","year":"2002","unstructured":"Wang LG, Zunger A (2002) Phosphorus and sulphur doping of diamond. Phys Rev B 66:161202(R). https:\/\/doi.org\/10.1103\/PhysRevB.66.161202","journal-title":"Phys Rev B"},{"key":"3484_CR9","doi-asserted-by":"publisher","first-page":"4738","DOI":"10.1063\/1.1484557","volume":"80","author":"B Sadigh","year":"2002","unstructured":"Sadigh B, Lenosky TJ, Caturla M-J, Quong AA, Benedict LX, Rubia TD (2002) Large enhancement of boron solubility in silicon due to biaxial stress. Apl Phys Lett 80:4738. https:\/\/doi.org\/10.1063\/1.1484557","journal-title":"Apl Phys Lett"},{"key":"3484_CR10","doi-asserted-by":"publisher","first-page":"071915","DOI":"10.1063\/1.2337081","volume":"89","author":"R Duffy","year":"2006","unstructured":"Duffy R, Dao T, Tamminga Y, Tak K, Roozeboom F, Augendre E (2006) Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals. Apl Phys Lett 89:071915. https:\/\/doi.org\/10.1063\/1.2337081","journal-title":"Apl Phys Lett"},{"key":"3484_CR11","doi-asserted-by":"publisher","first-page":"045301","DOI":"10.1063\/1.4994787","volume":"122","author":"A Bhaumik","year":"2017","unstructured":"Bhaumik A, Sachan R, Narayan J (2017) A novel high-temperature carbon-based superconductor: B-doped Q-carbon. J Appl Phys 122:045301. https:\/\/doi.org\/10.1063\/1.4994787","journal-title":"J Appl Phys"},{"key":"3484_CR12","doi-asserted-by":"publisher","first-page":"67014","DOI":"10.1209\/0295-5075\/108\/67014","volume":"108","author":"V Blank","year":"2014","unstructured":"Blank V, Buga S, Bormashov V, Denisov V, Kirichenko A, Kulbachinskii V, Kuznetsov M, Kytin V, Kytin G, Tarelkin S, Terentiev S (2014) Weak superconductivity in the surface layer of a bulk single-crystal boron-doped diamond. Europhys Lett 108:67014. https:\/\/doi.org\/10.1209\/0295-5075\/108\/67014","journal-title":"Europhys Lett"},{"key":"3484_CR13","doi-asserted-by":"publisher","first-page":"542","DOI":"10.1038\/nature02449","volume":"428","author":"EA Ekimov","year":"2004","unstructured":"Ekimov EA, Sidorov VA, Bauer ED, Melnik NN, Curro NJ, Thompson JD, Stishov SM (2004) Superconductivity in diamond. Nature 428:542. https:\/\/doi.org\/10.1038\/nature02449","journal-title":"Nature"},{"key":"3484_CR14","doi-asserted-by":"publisher","first-page":"085318","DOI":"10.1103\/PhysRevB.82.085318","volume":"82","author":"A Kawano","year":"2010","unstructured":"Kawano A, Ishiwata H, Iriyama S, Okada R, Yamaguchi T, Takano Y, Kawarada H (2010) Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition. Phys Rev B 82:085318. https:\/\/doi.org\/10.1103\/PhysRevB.82.085318","journal-title":"Phys Rev B"},{"key":"3484_CR15","doi-asserted-by":"publisher","first-page":"1846","DOI":"10.1063\/1.362996","volume":"80","author":"WL Wang","year":"1996","unstructured":"Wang WL, Polo MC, Sanchez G, Cifre J, Esteve J (1996) Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition. J Appl Phys 80:1846. https:\/\/doi.org\/10.1063\/1.362996","journal-title":"J Appl Phys"},{"key":"3484_CR16","doi-asserted-by":"publisher","first-page":"750","DOI":"10.1016\/S0925-9635(00)00522-7","volume":"10","author":"NG Ferreira","year":"2001","unstructured":"Ferreira NG, Abramof E, Corat EJ, Leite NF, Trava-Airoldi VJ (2001) Stress study of HFCVD boron-doped diamond films by X-ray diffraction measurements. Diamond Relat Mater 10:750. https:\/\/doi.org\/10.1016\/S0925-9635(00)00522-7","journal-title":"Diamond Relat Mater"},{"key":"3484_CR17","doi-asserted-by":"publisher","first-page":"2601","DOI":"10.1103\/PhysRevB.48.2601","volume":"48","author":"JW Ager III","year":"1993","unstructured":"Ager JW III, Drory MD (1993) Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition. Phys Rev B 48:2601. https:\/\/doi.org\/10.1103\/PhysRevB.48.2601","journal-title":"Phys Rev B"},{"key":"3484_CR18","doi-asserted-by":"publisher","first-page":"294","DOI":"10.1038\/NMAT3245","volume":"11","author":"PH Tan","year":"2012","unstructured":"Tan PH, Han WP, Zhao WJ, Wu ZH, Chang K, Wang H, Wang YF, Bonini N, Marzari N, Pugno N, Savini G, Lombardo A, Ferrari AC (2012) The shear mode of multilayer graphene. Nat Mater 11:294. https:\/\/doi.org\/10.1038\/NMAT3245","journal-title":"Nat Mater"},{"key":"3484_CR19","doi-asserted-by":"publisher","first-page":"031003","DOI":"10.1088\/2053-1583\/aa77d4","volume":"4","author":"I Stenger","year":"2017","unstructured":"Stenger I, Schue L, Boukhicha M, Berini B, Placais B, Loiseau A, Barjon J (2017) Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals. 2D Mater 4:031003. https:\/\/doi.org\/10.1088\/2053-1583\/aa77d4","journal-title":"2D Mater"},{"key":"3484_CR20","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1016\/j.diamond.2018.05.016","volume":"87","author":"MA Doronin","year":"2018","unstructured":"Doronin MA, Polyakov SN, Kravchuk KS, Molchanov SP, Lomov AA, Troschiev SYu, Terentiev SA (2018) Limits of single crystal diamond surface mechanical polishing. Diamond Relat Mater 87:149. https:\/\/doi.org\/10.1016\/j.diamond.2018.05.016","journal-title":"Diamond Relat Mater"},{"key":"3484_CR21","doi-asserted-by":"publisher","first-page":"C01069","DOI":"10.1088\/1748-0221\/C01069","volume":"6","author":"C Ponchut","year":"2011","unstructured":"Ponchut C, Rigal JM, Cl\u00e9ment J, Papillon E, Homs A, Petitdemange S (2011) MAXIPIX, a fast readout photon-counting X-ray area detector for synchrotron applications. J Instrum 6:C01069. https:\/\/doi.org\/10.1088\/1748-0221\/C01069","journal-title":"J Instrum"},{"key":"3484_CR22","doi-asserted-by":"publisher","first-page":"360","DOI":"10.1063\/1.168689","volume":"12","author":"DL Windt","year":"1998","unstructured":"Windt DL (1998) IMD\u2014software for modeling the optical properties of multilayer films. Comput Phys 12:360","journal-title":"Comput Phys"},{"key":"3484_CR23","doi-asserted-by":"publisher","first-page":"181","DOI":"10.1063\/1.366671","volume":"83","author":"F Brunet","year":"1998","unstructured":"Brunet F, Germi P, Pernet M, Deneuville A, Gheeraert E, Laugier F, Burdin M, Rolland G (1998) Microstructure evolution of boron doped homoepitaxial diamond films. J. Appl. Phys. 83:181. https:\/\/doi.org\/10.1063\/1.366671","journal-title":"J. Appl. Phys."},{"key":"3484_CR24","unstructured":"Kandil FA, Lord JD, Fry AT, Grant PV (2001) A review of residual stress measurement methods\u2014a guide to technique selection. NPL Report MATC(A)04, UK. http:\/\/eprintspublications.npl.co.uk\/id\/eprint\/1873"},{"key":"3484_CR25","volume-title":"X-ray metallography","author":"A Taylor","year":"1961","unstructured":"Taylor A (1961) X-ray metallography. Wiley, New York"},{"key":"3484_CR26","doi-asserted-by":"publisher","first-page":"918","DOI":"10.1016\/0925-9635(93)90250-6","volume":"2","author":"CA Klein","year":"1993","unstructured":"Klein CA, Cardinale GF (1993) Young\u2019s modulus and Poisson\u2019s ratio of CVD diamond. Diamond Relat Mater 2:918. https:\/\/doi.org\/10.1016\/0925-9635(93)90250-6","journal-title":"Diamond Relat Mater"},{"key":"3484_CR27","doi-asserted-by":"publisher","first-page":"5160","DOI":"10.1103\/PhysRevLett.84.5160","volume":"84","author":"RH Telling","year":"2000","unstructured":"Telling RH, Pickard CJ, Payne MC, Field JE (2000) Theoretical strength and cleavage of diamond. Phys Rev Lett 84:5160. https:\/\/doi.org\/10.1103\/PhysRevLett.84.5160","journal-title":"Phys Rev Lett"},{"key":"3484_CR28","doi-asserted-by":"publisher","first-page":"083001","DOI":"10.1088\/1361-6463\/aaf465","volume":"52","author":"JH Kim","year":"2018","unstructured":"Kim JH, Jeong JH, Kim N, Joshi R, Lee G (2018) Mechanical properties of two-dimensional materials and their applications. J Phys D: Appl Phys 52:083001. https:\/\/doi.org\/10.1088\/1361-6463\/aaf465","journal-title":"J Phys D: Appl Phys"},{"key":"3484_CR29","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-04548-0","author":"AM Zaitsev","year":"2013","unstructured":"Zaitsev AM (2013) Optical properties of diamond: a data handbook. Springer, Berlin. https:\/\/doi.org\/10.1007\/978-3-662-04548-0","journal-title":"Springer, Berlin."}],"container-title":["Nanoscale Research Letters"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1186\/s11671-021-03484-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1186\/s11671-021-03484-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1186\/s11671-021-03484-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,3,20]],"date-time":"2023-03-20T04:42:18Z","timestamp":1679287338000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1186\/s11671-021-03484-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,2,8]]},"references-count":29,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2021,12]]}},"alternative-id":["3484"],"URL":"https:\/\/doi.org\/10.1186\/s11671-021-03484-4","relation":{},"ISSN":["1556-276X"],"issn-type":[{"value":"1556-276X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,2,8]]},"assertion":[{"value":"20 October 2020","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 January 2021","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"8 February 2021","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"The authors declare that they have no competing interests.","order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing interests"}}],"article-number":"25"}}