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This study investigates and compares three GaAsSb\/InGaAs-based biosensor architectures: single cavity dual material double composite gate HTFET (SC-DM-DG HTFET), dual cavity dual material double composite gate HTFET (DC-DM-DG HTFET), and single cavity dual material extended double composite gate HTFET (SC-DM-EDG HTFET). The III\u2013V heterostructure in the SC-DM-EDG HTFET enhances tunnelling probability, gate control, and on-current (\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n ), thereby providing higher sensitivity than previously reported GaAsSb\/InGaAs-based HTFET and FET biosensors. Sensitivity and selectivity parameters for\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n , transconductance (\n g<\/jats:italic>\n \n m<\/jats:italic>\n <\/jats:sub>\n ), and threshold voltage (\n V<\/jats:italic>\n \n t<\/jats:italic>\n h<\/jats:italic>\n <\/jats:sub>\n ) were evaluated for various neutral and charged biomolecules. Under the standard bias condition (\n V<\/jats:italic>\n DS<\/jats:sub>\n \u00a0=\u00a01.5 V,\n V<\/jats:italic>\n GS<\/jats:sub>\n \u00a0=\u00a01.3 V), the SC-DM-EDG HTFET exhibits the highest\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n of 3.02\u00a0\u00d7\u00a010\n \u22124<\/jats:sup>\n A\/\n \u03bc<\/jats:italic>\n m among the three structures; under a separately re-optimized bias (\n V<\/jats:italic>\n DS<\/jats:sub>\n \u00a0=\u00a00.9 V,\n V<\/jats:italic>\n GS<\/jats:sub>\n \u00a0=\u00a01 V), the same structure instead achieves maximum sensitivities of 3.35\u00a0\u00d7\u00a010\n 6<\/jats:sup>\n (\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n ) and 3.49\u00a0\u00d7\u00a010\n 5<\/jats:sup>\n (\n g<\/jats:italic>\n \n m<\/jats:italic>\n <\/jats:sub>\n ) for\n K<\/jats:italic>\n \u00a0=\u00a012, at a correspondingly reduced\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n of 1.91\u00a0\u00d7\u00a010\n \u22124<\/jats:sup>\n A\/\n \u03bc<\/jats:italic>\n m. The maximum\n V<\/jats:italic>\n \n t<\/jats:italic>\n h<\/jats:italic>\n <\/jats:sub>\n sensitivity of 0.49 is achieved by this structure under the standard bias condition. In biomolecule differentiation, the SC-DM-DG HTFET demonstrates peak\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n and\n g<\/jats:italic>\n \n m<\/jats:italic>\n <\/jats:sub>\n selectivity values of 9.55 and 4.64 for\n K<\/jats:italic>\n \u00a0=\u00a012, respectively, while the peak\n V<\/jats:italic>\n \n t<\/jats:italic>\n h<\/jats:italic>\n <\/jats:sub>\n selectivity value of 0.3 appears in the SC-DM-EDG HTFET also for the same biomolecule. Furthermore, the SC-DM-EDG HTFET achieves superior\n I<\/jats:italic>\n \n O<\/jats:italic>\n N<\/jats:italic>\n <\/jats:sub>\n ,\n g<\/jats:italic>\n \n m<\/jats:italic>\n <\/jats:sub>\n , and\n V<\/jats:italic>\n \n t<\/jats:italic>\n h<\/jats:italic>\n <\/jats:sub>\n sensitivities for charged biomolecules, confirming its robustness, selectivity, and potential for next-generation, high-performance biosensing applications.\n <\/jats:p>","DOI":"10.1186\/s11671-026-04978-9","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T12:20:17Z","timestamp":1792066817000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Comparative investigation of extended-gate GaAsSb\/InGaAs HTFET biosensors for label-free biomolecule detection"],"prefix":"10.1186","volume":"21","author":[{"given":"Mahin","family":"Anjum","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Md. 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This study is based entirely on device-level TCAD simulation and did not involve human participants, human data, or animal subjects.","order":1,"name":"Ethics","label":"Ethical approval","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"Not applicable.","order":2,"name":"Ethics","label":"Consent to participate","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"Not applicable.","order":3,"name":"Ethics","label":"Consent to publish","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors declare no competing interests.","order":4,"name":"Ethics","label":"Competing interests","group":{"name":"EthicsHeading","label":"Declarations"}}],"article-number":"518"}}