{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,9]],"date-time":"2025-11-09T07:37:20Z","timestamp":1762673840650},"reference-count":21,"publisher":"Springer Science and Business Media LLC","issue":"1","content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Nanoscale Res Lett"],"published-print":{"date-parts":[[2011,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n          <jats:p>Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL structures, the GaN QD recombination was found to be dependent on the implantation fluence. For samples implanted with high fluence, a broad emission band at 2.7 eV was tentatively assigned to the emission of large blurred GaN QD present in the damage region of the implanted SL. This emission band is absent in the SL structures implanted with lower fluence and hence lower defect level. In both cases, high energy emission bands at approx. 3.9 eV suggest the presence of smaller dots for which the photoluminescence intensity was seen to be constant with increasing temperatures. Despite the fact that different deexcitation processes occur in undoped and Eu-implanted SL structures, the excitation population mechanisms were seen to be sample-independent. Two main absorption bands with maxima at approx. 4.1 and 4.7 to 4.9 eV are responsible for the population of the optically active centres in the SL samples.<\/jats:p>","DOI":"10.1186\/1556-276x-6-378","type":"journal-article","created":{"date-parts":[[2011,5,10]],"date-time":"2011-05-10T18:15:59Z","timestamp":1305051359000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination"],"prefix":"10.1186","volume":"6","author":[{"given":"Marco","family":"Peres","sequence":"first","affiliation":[]},{"given":"S\u00e9rgio","family":"Magalh\u00e3es","sequence":"additional","affiliation":[]},{"given":"Vincent","family":"Fellmann","sequence":"additional","affiliation":[]},{"given":"Bruno","family":"Daudin","sequence":"additional","affiliation":[]},{"given":"Armando Jos\u00e9","family":"Neves","sequence":"additional","affiliation":[]},{"given":"Eduardo","family":"Alves","sequence":"additional","affiliation":[]},{"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[]},{"given":"Teresa","family":"Monteiro","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2011,5,9]]},"reference":[{"key":"444_CR1","volume-title":"Semiconductor Nanostructures for Optoelectronic Applications","author":"T Steiner","year":"2004","unstructured":"Steiner T: Semiconductor Nanostructures for Optoelectronic Applications. Boston, London: Artech House Inc; 2004."},{"key":"444_CR2","doi-asserted-by":"publisher","DOI":"10.1002\/9783527628414","volume-title":"Handbook of Nitride Semiconductors and Devices","author":"H Morko\u00e7","year":"2008","unstructured":"Morko\u00e7 H: Handbook of Nitride Semiconductors and Devices. Weinheim, Berlin: Wiley-VCH; 2008."},{"key":"444_CR3","doi-asserted-by":"publisher","first-page":"044326(1)","DOI":"10.1063\/1.2335400","volume":"100","author":"F Guillot","year":"2006","unstructured":"Guillot F, Bellet-Amalric E, Monroy E, Tchernycheva M, Nevou L, Donyennette L, Julien FH, Dang LS, Remmele T, Albrecht M, Shibata T, Tanaka M: Si-doped GaN\/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. J Appl Phys 2006, 100: 044326(1)-044326(10).","journal-title":"J Appl Phys"},{"key":"444_CR4","doi-asserted-by":"publisher","first-page":"R15989","DOI":"10.1103\/PhysRevB.58.R15989","volume":"58","author":"F Widmann","year":"1998","unstructured":"Widmann F, Simon J, Daudin B, Feuillet G, Rouvi\u00e8re JL, Pelekanos NT, Fishman G: Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect. Phys Rev B 1998, 58: R15989-R15992. 10.1103\/PhysRevB.58.R15989","journal-title":"Phys Rev B"},{"key":"444_CR5","doi-asserted-by":"publisher","first-page":"962","DOI":"10.1063\/1.124567","volume":"75","author":"B Damilano","year":"1999","unstructured":"Damilano B, Grandjean N, Semond F, Massies J, Leroux M: From visible to white light emission by GaN quantum dots on Si(111) substrate. Appl Phys Lett 1999, 75: 962\u2013964. 10.1063\/1.124567","journal-title":"Appl Phys Lett"},{"key":"444_CR6","doi-asserted-by":"publisher","first-page":"353","DOI":"10.1016\/S0026-2692(98)00134-7","volume":"30","author":"F Widmann","year":"1999","unstructured":"Widmann F, Simon J, Pelekanos NT, Daudin B, Feuillet G, Rouvi\u00e8re JL, Fishman G: Giant piezoelectric effect in GaN self-assembled quantum dots. Microelectron J 1999, 30: 353\u2013356. 10.1016\/S0026-2692(98)00134-7","journal-title":"Microelectron J"},{"key":"444_CR7","doi-asserted-by":"publisher","first-page":"1675","DOI":"10.1002\/pssb.200983674","volume":"24","author":"M Peres","year":"2010","unstructured":"Peres M, Neves AJ, Monteiro T, Magalh\u00e3es S, Alves E, Lorenz K, Okuno-Vila H, Fellmann V, Bougerol C, Daudin B: Influence of thermal annealing on the structural and optical properties of GaN\/AlN quantum dots. Phys Status Solidi B 2010, 24: 1675\u20131678.","journal-title":"Phys Status Solidi B"},{"key":"444_CR8","doi-asserted-by":"publisher","first-page":"115305(1)","DOI":"10.1103\/PhysRevB.68.115305","volume":"68","author":"V Ranjan","year":"2003","unstructured":"Ranjan V, Allan G, Priester C, Delerue C: Self-consistent calculations of the optical properties of GaN quantum dots. Phys Rev B 2003, 68: 115305(1)-115305(7).","journal-title":"Phys Rev B"},{"key":"444_CR9","doi-asserted-by":"publisher","first-page":"521","DOI":"10.1063\/1.1386405","volume":"79","author":"AD Andreev","year":"2001","unstructured":"Andreev AD, O'Reilly EP: Optical transitions and radiative lifetime in GaN\/AlN self-organized quantum dots. Appl Phys Lett 2001, 79: 521\u2013523. 10.1063\/1.1386405","journal-title":"Appl Phys Lett"},{"key":"444_CR10","doi-asserted-by":"publisher","first-page":"033519(1)","DOI":"10.1063\/1.3075899","volume":"105","author":"J Brault","year":"2009","unstructured":"Brault J, Huault T, Natali F, Damilano B, Lefebvre D, Leroux M, Korytov M, Massies J: Tailoring the shape of GaN\/Al\n\nx\n\nGa\n\n1-x\n\nN nanostructures to extend their luminescence in the visible range. J Appl Phys 2009, 105: 033519(1)-033519(7).","journal-title":"J Appl Phys"},{"key":"444_CR11","doi-asserted-by":"publisher","first-page":"3883","DOI":"10.1063\/1.372429","volume":"87","author":"P Ramvall","year":"2000","unstructured":"Ramvall P, Riblet P, Nomura S, Aoyagi Y, Tanaka S: Optical properties of GaN quantum dots. J Appl Phys 2000, 87: 3883\u20133890. 10.1063\/1.372429","journal-title":"J Appl Phys"},{"key":"444_CR12","doi-asserted-by":"publisher","first-page":"4934","DOI":"10.1063\/1.1530375","volume":"81","author":"YH Cho","year":"2002","unstructured":"Cho YH, Kwon BJ, Barjon J, Brault J, Daudin B, Mariette H, Dang LS: Optical characteristics of hexagonal GaN self-assembled quantum dots: strong influence of built-in electric field and carrier localization. Appl Phys Lett 2002, 81: 4934\u20134936. 10.1063\/1.1530375","journal-title":"Appl Phys Lett"},{"key":"444_CR13","doi-asserted-by":"publisher","first-page":"075306(1)","DOI":"10.1103\/PhysRevB.75.075306","volume":"75","author":"G Sarusi","year":"2007","unstructured":"Sarusi G, Moshe O, Khatsevich S, Rich DH, Damilano B: Microcrack-induced strain relief in GaN\/AlN quantum dots grown on Si(111). Phys Rev B 2007, 75: 075306(1)-075306(6).","journal-title":"Phys Rev B"},{"key":"444_CR14","doi-asserted-by":"publisher","first-page":"051911(1)","DOI":"10.1063\/1.2841825","volume":"92","author":"T Huault","year":"2008","unstructured":"Huault T, Brault J, Natali F, Damilano B, Lefebvre D, Nguyen L, Leroux M, Massies J: Blue-light emission from GaN\/Al\n\n0.5\n\nGa\n\n0.5\n\nN quantum dots. Appl Phys Lett 2008, 92: 051911(1)-051911(3).","journal-title":"Appl Phys Lett"},{"key":"444_CR15","doi-asserted-by":"publisher","first-page":"2254","DOI":"10.1063\/1.1592866","volume":"94","author":"N Gogneau","year":"2003","unstructured":"Gogneau N, Jalabert D, Monroy E, Shibata T, Tanaka M, Daudin B: Structure of GaN quantum dots grown under \"modified Stranski-Krastanow\" conditions on AlN. J Appl Phys 2003, 94: 2254\u20132261. 10.1063\/1.1592866","journal-title":"J Appl Phys"},{"key":"444_CR16","doi-asserted-by":"publisher","first-page":"125427(1)","DOI":"10.1103\/PhysRevB.70.125427","volume":"70","author":"C Adelmann","year":"2004","unstructured":"Adelmann C, Daudin B, Olivier RA, Briggs GAD, Rudd RE: Nucleation and growth of GaN\/AlN quantum dots. Phys Rev B 2004, 70: 125427(1)-125427(8).","journal-title":"Phys Rev B"},{"key":"444_CR17","doi-asserted-by":"publisher","first-page":"084306(1)","DOI":"10.1063\/1.3496624","volume":"108","author":"S Magalh\u00e3es","year":"2010","unstructured":"Magalh\u00e3es S, Peres M, Fellmann V, Daudin B, Neves AJ, Alves E, Monteiro T, Lorenz K: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation. J Appl Phys 2010, 108: 084306(1)-084306(6).","journal-title":"J Appl Phys"},{"key":"444_CR18","volume-title":"Opt Mater","author":"M Peres","year":"2011","unstructured":"Peres M, Magalh\u00e3es S, Rodrigues J, Soares MJ, Fellmann V, Neves AJ, Alves E, Daudin B, Lorenz K, Monteiro T: The role of the annealing temperature on the optical and structural properties of Eu doped GaN\/AlN QD. Opt Mater 2011, in press."},{"key":"444_CR19","doi-asserted-by":"publisher","first-page":"2056","DOI":"10.1002\/pssc.200565365","volume":"3","author":"BJ Kwon","year":"2006","unstructured":"Kwon BJ, Hwang JS, Kwack HS, Cho YH, Gogneau N, Daudin B, Dang LS: Influence of stacking on optical characteristics of GaN\/AlN self-organized quantum dots. Phys Stat Sol (c) 2006, 3: 2056\u20132059. 10.1002\/pssc.200565365","journal-title":"Phys Stat Sol (c)"},{"key":"444_CR20","doi-asserted-by":"publisher","first-page":"64","DOI":"10.1063\/1.1769586","volume":"85","author":"S Kako","year":"2004","unstructured":"Kako S, Hoshino K, Iwamoto S, Ishida S, Arakawa Y: Exciton and biexciton luminescence from single hexagonal GaN\/AlN self-assembled quantum dots. Appl Phys Lett 2004, 85: 64\u201366. 10.1063\/1.1769586","journal-title":"Appl Phys Lett"},{"key":"444_CR21","doi-asserted-by":"publisher","first-page":"1089","DOI":"10.1080\/10420150215822","volume":"157","author":"B Berzina","year":"2002","unstructured":"Berzina B, Trinkler L, Sils J, Atobe K: Luminescence mechanisms of oxygen-related defects in AlN. Rad Effects Def Sol 2002, 157: 1089\u20131092. 10.1080\/10420150215822","journal-title":"Rad Effects Def Sol"}],"container-title":["Nanoscale Research Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1186\/1556-276X-6-378.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,3,20]],"date-time":"2023-03-20T04:27:37Z","timestamp":1679286457000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1186\/1556-276X-6-378"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,5,9]]},"references-count":21,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2011,12]]}},"alternative-id":["444"],"URL":"https:\/\/doi.org\/10.1186\/1556-276x-6-378","relation":{},"ISSN":["1556-276X"],"issn-type":[{"value":"1556-276X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,5,9]]},"assertion":[{"value":"8 September 2010","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 May 2011","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 May 2011","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"378"}}