{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,9]],"date-time":"2026-09-09T04:54:35Z","timestamp":1788929675764,"version":"build-2803163510"},"reference-count":38,"publisher":"Optica Publishing Group","issue":"12","license":[{"start":{"date-parts":[[2024,5,23]],"date-time":"2024-05-23T00:00:00Z","timestamp":1716422400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR-OA"},{"start":{"date-parts":[[2024,5,23]],"date-time":"2024-05-23T00:00:00Z","timestamp":1716422400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"funder":[{"DOI":"10.13039\/100021130","name":"Bundesministerium f\u00fcr Wirtschaft und Klimaschutz","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100021130","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Express"],"published-print":{"date-parts":[[2024,6,3]]},"abstract":"<jats:p>\n                    Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10\n                    <jats:sup>\u22123<\/jats:sup>\n                    \u2009\u03a9cm to 10\n                    <jats:sup>2<\/jats:sup>\n                    \u2009\u03a9cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.\n                  <\/jats:p>","DOI":"10.1364\/oe.519564","type":"journal-article","created":{"date-parts":[[2024,4,3]],"date-time":"2024-04-03T10:00:13Z","timestamp":1712138413000},"page":"21028","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy"],"prefix":"10.1364","volume":"32","author":[{"ORCID":"https:\/\/orcid.org\/0009-0000-9028-8535","authenticated-orcid":true,"given":"Joshua","family":"Hennig","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/019hjw009","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Department of Physics and Research Center OPTIMAS"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jens","family":"Klier","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/019hjw009","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Stefan","family":"Duran","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/019hjw009","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kuei-Shen","family":"Hsu","sequence":"additional","affiliation":[{"name":"Institute of Applied Physics"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1403-395X","authenticated-orcid":true,"given":"Jan","family":"Beyer","sequence":"additional","affiliation":[{"name":"Institute of Applied Physics"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Christian","family":"R\u00f6der","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology IISB"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Franziska C.","family":"Beyer","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology IISB"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nadine","family":"Sch\u00fcler","sequence":"additional","affiliation":[{"name":"Freiberg Instruments GmbH"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nico","family":"Vieweg","sequence":"additional","affiliation":[{"name":"TOPTICA Photonics AG"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Katja","family":"Dutzi","sequence":"additional","affiliation":[{"name":"TOPTICA Photonics AG"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2389-5532","authenticated-orcid":true,"given":"Georg","family":"von Freymann","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/019hjw009","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Department of Physics and Research Center OPTIMAS"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Daniel","family":"Molter","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/019hjw009","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2024,5,23]]},"reference":[{"key":"oe-32-12-21028-R1","doi-asserted-by":"publisher","first-page":"711","DOI":"10.1002\/j.1538-7305.1958.tb03883.x","volume":"37","author":"Smits","year":"1958","journal-title":"Bell Syst. 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