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The metallic layer is made of doped silicon (D-Si) material, while the dielectric layer consists of Si and Si3N4. Silicon offers several benefits, such as its compatibility with the technology of complementary metal-oxide-semiconductor (CMOS) and easy manufacture using traditional silicon fabrication techniques. Our proposed structure exhibits high sensitivity at a wavelength range of 12\u2005\u00b5m to 14\u2005\u00b5m in the infrared range (IR). We have introduced a metasurface plasmonic sensor as a sensing system to detect micro changes in the refractive index. To assess its performance, simulations using commercial finite difference time domain techniques were performed. By analyzing the resonant reflection spectra in various regions of the non-Hermitian eigenmode space, we evaluated the sensing capabilities of the plasmonic grating. 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