{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,30]],"date-time":"2026-07-30T12:29:24Z","timestamp":1785414564865,"version":"3.56.0"},"reference-count":38,"publisher":"Optica Publishing Group","issue":"6","license":[{"start":{"date-parts":[[2026,3,20]],"date-time":"2026-03-20T00:00:00Z","timestamp":1773964800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/doi.org\/10.1364\/OA_License_v2#VOR-OA"},{"start":{"date-parts":[[2026,3,20]],"date-time":"2026-03-20T00:00:00Z","timestamp":1773964800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/opg.optica.org\/policies\/opg-tdm-policy.json"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["12575309"],"award-info":[{"award-number":["12575309"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"},{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100014955","name":"State Key Laboratory of Nuclear Physics and Technology, Peking University","doi-asserted-by":"crossref","award":["NPT2023KFJ11"],"award-info":[{"award-number":["NPT2023KFJ11"]}],"id":[{"id":"10.13039\/501100014955","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["opg.optica.org"],"crossmark-restriction":false},"short-container-title":["Opt. Express"],"published-print":{"date-parts":[[2026,3,23]]},"abstract":"<jats:p>\n                    Two-dimensional materials have demonstrated revolutionary potential in optoelectronic devices due to their atomic-scale thickness, high carrier mobility, and broad bandgap coverage. Among them, tungsten diselenide (WSe\n                    <jats:sub>2<\/jats:sub>\n                    ) and molybdenum ditelluride (MoTe\n                    <jats:sub>2<\/jats:sub>\n                    ), as representative members of the transition metal dichalcogenide (TMD) family, can be vertically stacked to form a type-I van der Waals heterojunction, offering a strategy for designing high-performance avalanche phototransistors (APTs). The core operating principle of an APT relies on carrier avalanche multiplication under a high electric field. When the device enters the avalanche breakdown regime, a strong electric field accelerates hot carriers, inducing impact ionization via collisions with the lattice and thereby generating a large number of electron\u2013hole pairs. Unlike conventional type-II heterojunctions, in a type-I configuration, the wide-bandgap component (e.g., WSe\n                    <jats:sub>2<\/jats:sub>\n                    ) functions as a barrier layer that effectively suppresses carrier recombination, while photo-generated carriers in the narrow-bandgap material (e.g., MoTe\n                    <jats:sub>2<\/jats:sub>\n                    ) can cross the interface through tunneling, markedly improving carrier collection efficiency and response speed. This property allows the type-I heterojunction to significantly suppress thermal noise in the APT before reaching the critical voltage. Combined with the inherently low dielectric constant and atomic-scale thickness of 2D materials, avalanche breakdown can be achieved at substantially lower bias voltages, greatly reducing power consumption and the risk of thermal damage.\n                  <\/jats:p>","DOI":"10.1364\/oe.589793","type":"journal-article","created":{"date-parts":[[2026,3,12]],"date-time":"2026-03-12T05:00:10Z","timestamp":1773291610000},"page":"11607","update-policy":"https:\/\/doi.org\/10.1364\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Gate-tunable broad-spectrum avalanche photodetector based on WSe\n                    <sub>2<\/sub>\n                    \/MoTe\n                    <sub>2<\/sub>\n                    type-I heterojunction"],"prefix":"10.1364","volume":"34","author":[{"given":"Ruichang","family":"Chen","sequence":"first","affiliation":[{"id":[{"id":"https:\/\/ror.org\/0207yh398","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Liu","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/0207yh398","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7912-1742","authenticated-orcid":true,"given":"Yang","family":"Tan","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/0207yh398","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9277-9810","authenticated-orcid":true,"given":"Feng","family":"Chen","sequence":"additional","affiliation":[{"id":[{"id":"https:\/\/ror.org\/0207yh398","id-type":"ROR","asserted-by":"publisher"}]}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"285","published-online":{"date-parts":[[2026,3,20]]},"reference":[{"key":"oe-34-6-11607-R1","doi-asserted-by":"publisher","first-page":"419","DOI":"10.1038\/nature12385","type":"journal-article","volume":"499","author":"Geim","year":"2013","journal-title":"Nature"},{"key":"oe-34-6-11607-R2","doi-asserted-by":"publisher","first-page":"16042","DOI":"10.1038\/natrevmats.2016.42","type":"journal-article","volume":"1","author":"Liu","year":"2016","journal-title":"Nat. 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