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Precise control of the internal electric-field profile using p- and n-type field-control layers reduces the electron transit time by using drift velocity overshoot, resulting in 3-dB bandwidth of 205\u2005GHz. Furthermore, the device exhibited a high responsivity of 0.51 A\/W while maintaining high 3-dB bandwidth by employing interference-based absorption enhancement technique. A low dark current of approximately 1 pA with excellent uniformity and high optical-power tolerance with a 1-dB compression current of 10\u2005mA at 200\u2005GHz are also demonstrated. 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